FABRICATING WAFERS WITH ELECTRICAL CONTACTS ON A SURFACE PARALLEL TO AN ACTIVE SURFACE

Provided herein include various examples of a method for manufacturing aspects of an apparatus, a sensor system. The method may include obtaining a first carrier bonded to an upper surface of the silicon wafer. This wafer includes through silicon vias (TSVs) extended through openings in a passivatio...

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Hauptverfasser:	AGAH, Ali, RIVAL, Arnaud, ADAY, Jon, EMADI, Arvin
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING
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creator	AGAH, Ali RIVAL, Arnaud ADAY, Jon EMADI, Arvin
description	Provided herein include various examples of a method for manufacturing aspects of an apparatus, a sensor system. The method may include obtaining a first carrier bonded to an upper surface of the silicon wafer. This wafer includes through silicon vias (TSVs) extended through openings in a passivation stack, with electrical contacts coupled to portions of the TSVs exposed through these openings. The method may include de-bonding the first carrier from the upper surface of the silicon wafer. The method may include dicing the silicon wafer into subsections comprising dies.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING
title	FABRICATING WAFERS WITH ELECTRICAL CONTACTS ON A SURFACE PARALLEL TO AN ACTIVE SURFACE
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