SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE

Provided is a semiconductor device having a high cutoff resistance capable of suppressing local current/electric field concentration and current concentration at a chip termination portion due to an electric field variation between IGBT cells due to a shape variation and impurity variation during manufacturing. The semiconductor device is characterized by including an emitter electrode formed on a front surface of a semiconductor substrate via an interlayer insulating film, a collector electrode formed on a back surface of the semiconductor substrate, a first semiconductor layer of a first conductivity type in contact with the collector electrode and formed on the back surface of the semiconductor substrate, a second semiconductor layer of a second conductivity type formed inside the first semiconductor layer, a central area cell disposed along a front surface of the semiconductor substrate, and an outer peripheral area cell located outside the central area cell in a planar direction of the semiconductor substrate and disposed between the central area cell and the chip termination guard ring area.