TRANSISTOR AND METHODS OF FORMING INTEGRATED CIRCUITRY

A transistor comprises a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region. At least one of the top source/drain region, the bottom source/drain region, and...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIU, Hung-Wei, HULL, Jeffery B, CHHAJED, Sameer, KHANDEKAR, Anish A
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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