MULTI-DIE FINE GRAIN INTEGRATED VOLTAGE REGULATION

A semiconductor device package is described that includes a power consuming device (such as an SOC device). The power consuming device (120) may include one or more current consuming elements. A passive device (100) may be coupled (110) to the power consuming device. The passive device includes a pl...

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Hauptverfasser: SEARLES, Shawn, ZERBE, Jared L, FANG, Emerson S, ZHAI, Jun
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creator SEARLES, Shawn
ZERBE, Jared L
FANG, Emerson S
ZHAI, Jun
description A semiconductor device package is described that includes a power consuming device (such as an SOC device). The power consuming device (120) may include one or more current consuming elements. A passive device (100) may be coupled (110) to the power consuming device. The passive device includes a plurality of passive elements formed on a semiconductor substrate. The passive elements are arranged in an array of structures (102) on the semiconductor substrate. The power consuming device and the passive device are coupled using one or more terminals (110). The passive device and power consuming device coupling may be configured in such a way that the power consuming device determines functionally the way the passive device elements will be used.
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subjects BASIC ELECTRIC ELEMENTS
CAPACITORS
CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title MULTI-DIE FINE GRAIN INTEGRATED VOLTAGE REGULATION
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