METHODS FOR FORMING SEMICONDUCTOR DEVICES USING SACRIFICIAL CAPPING AND INSULATION LAYERS

Methods of fabricating a semiconductor device include providing a semiconductor substrate (118) that includes a plurality of epitaxial layers, including a channel layer (108) and a permanent cap (116) over the channel layer, where the permanent cap defines an upper surface of the semiconductor subst...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Teplik, James Allen, Moore, Karen Elizabeth, Huang, Jenn Hwa, Green, Bruce McRae, Yue, Yuanzheng
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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