METHOD FOR FORMING TRANSISTOR STRUCTURES

According to an aspect of the present inventive concept there is provided a method for forming a first and a second transistor structure, wherein the first and second transistor structures are spaced apart by an insulating wall (108), and the method comprising:forming on a semiconductor layer of the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BRIGGS, Basoene, CHAN, Boon Teik, BOEMMELS, Juergen
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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