SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device includes first and second trenches, and a first layer provided therebetween, in a principal surface of a semiconductor substrate, a second layer in contact with and sandwiching the first trench with the first layer, a third layer provided under the second layer and in contact...

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Bibliographische Detailangaben
Hauptverfasser: SHIRAISHI, Naohiro, KONDO, Katsunori, WATANABE, Noriyoshi, YATAGO, Masatoshi
Format: Patent
Sprache:eng ; fre ; ger
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