SUPERJUNCTION TRANSISTOR DEVICE AND METHOD FOR FORMING A SUPERJUNCTION TRANSISTOR DEVICE

A method for forming a drift region of a superjunction transistor and a superjunction transistor device are disclosed. The method includes forming a plurality of first regions (21) of a first doping type and a plurality of second regions (22, 23) of a second type in a semiconductor body (100) such t...

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Bibliographische Detailangaben

Hauptverfasser:	MURI, Ingo, TUTUC, Daniel, WEBER, Hans
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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