LIGHT DETECTOR, LIGHT DETECTION SYSTEM, LIDAR DEVICE, AND VEHICLE
According to one embodiment, a light detector (100) includes a first semiconductor region of a first conductivity type, a first element (11), a second element (12), an insulating body (30), a first interconnect (61), and a second interconnect (62). The second semiconductor region (2) of the first el...
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creator | Suzuki, Kazuhiro Fujiwara, Ikuo Sasaki, Keita Atsuta, Masaki Kwon, Honam Shimizu, Mariko Okamoto, Kazuaki |
description | According to one embodiment, a light detector (100) includes a first semiconductor region of a first conductivity type, a first element (11), a second element (12), an insulating body (30), a first interconnect (61), and a second interconnect (62). The second semiconductor region (2) of the first element (11) is provided on the first semiconductor region (1). The third semiconductor region (3) of the first element (11) is provided on the second semiconductor region (2), and contacts the second semiconductor region (2). The fourth semiconductor region (4) of the second element (12) is provided on the first semiconductor region (1), and has an impurity concentration of a first conductivity type less than in the second semiconductor region (2). The fifth semiconductor region (5) of the second element (12) is provided on the fourth semiconductor region (4), and contacts the fourth semiconductor region (4). The insulating body (30) is provided between the first element (11) and the second element (12). The first interconnect (61) is electrically connected to the third semiconductor region (3). The second interconnect (62) is electrically connected to the fifth semiconductor region (5). |
format | Patent |
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The second semiconductor region (2) of the first element (11) is provided on the first semiconductor region (1). The third semiconductor region (3) of the first element (11) is provided on the second semiconductor region (2), and contacts the second semiconductor region (2). The fourth semiconductor region (4) of the second element (12) is provided on the first semiconductor region (1), and has an impurity concentration of a first conductivity type less than in the second semiconductor region (2). The fifth semiconductor region (5) of the second element (12) is provided on the fourth semiconductor region (4), and contacts the fourth semiconductor region (4). The insulating body (30) is provided between the first element (11) and the second element (12). The first interconnect (61) is electrically connected to the third semiconductor region (3). The second interconnect (62) is electrically connected to the fifth semiconductor region (5).</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210922&DB=EPODOC&CC=EP&NR=3882987A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210922&DB=EPODOC&CC=EP&NR=3882987A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Suzuki, Kazuhiro</creatorcontrib><creatorcontrib>Fujiwara, Ikuo</creatorcontrib><creatorcontrib>Sasaki, Keita</creatorcontrib><creatorcontrib>Atsuta, Masaki</creatorcontrib><creatorcontrib>Kwon, Honam</creatorcontrib><creatorcontrib>Shimizu, Mariko</creatorcontrib><creatorcontrib>Okamoto, Kazuaki</creatorcontrib><title>LIGHT DETECTOR, LIGHT DETECTION SYSTEM, LIDAR DEVICE, AND VEHICLE</title><description>According to one embodiment, a light detector (100) includes a first semiconductor region of a first conductivity type, a first element (11), a second element (12), an insulating body (30), a first interconnect (61), and a second interconnect (62). The second semiconductor region (2) of the first element (11) is provided on the first semiconductor region (1). The third semiconductor region (3) of the first element (11) is provided on the second semiconductor region (2), and contacts the second semiconductor region (2). The fourth semiconductor region (4) of the second element (12) is provided on the first semiconductor region (1), and has an impurity concentration of a first conductivity type less than in the second semiconductor region (2). The fifth semiconductor region (5) of the second element (12) is provided on the fourth semiconductor region (4), and contacts the fourth semiconductor region (4). The insulating body (30) is provided between the first element (11) and the second element (12). The first interconnect (61) is electrically connected to the third semiconductor region (3). The second interconnect (62) is electrically connected to the fifth semiconductor region (5).</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD08XT3CFFwcQ1xdQ7xD9JRQOZ7-vspBEcGh7j6gsRdHIOA4mGezq46Co5-Lgphrh6ezj6uPAysaYk5xam8UJqbQcHNNcTZQze1ID8-tbggMTk1L7Uk3jXA2MLCyNLC3NHQmAglAFGuKis</recordid><startdate>20210922</startdate><enddate>20210922</enddate><creator>Suzuki, Kazuhiro</creator><creator>Fujiwara, Ikuo</creator><creator>Sasaki, Keita</creator><creator>Atsuta, Masaki</creator><creator>Kwon, Honam</creator><creator>Shimizu, Mariko</creator><creator>Okamoto, Kazuaki</creator><scope>EVB</scope></search><sort><creationdate>20210922</creationdate><title>LIGHT DETECTOR, LIGHT DETECTION SYSTEM, LIDAR DEVICE, AND VEHICLE</title><author>Suzuki, Kazuhiro ; Fujiwara, Ikuo ; Sasaki, Keita ; Atsuta, Masaki ; Kwon, Honam ; Shimizu, Mariko ; Okamoto, Kazuaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3882987A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Suzuki, Kazuhiro</creatorcontrib><creatorcontrib>Fujiwara, Ikuo</creatorcontrib><creatorcontrib>Sasaki, Keita</creatorcontrib><creatorcontrib>Atsuta, Masaki</creatorcontrib><creatorcontrib>Kwon, Honam</creatorcontrib><creatorcontrib>Shimizu, Mariko</creatorcontrib><creatorcontrib>Okamoto, Kazuaki</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Suzuki, Kazuhiro</au><au>Fujiwara, Ikuo</au><au>Sasaki, Keita</au><au>Atsuta, Masaki</au><au>Kwon, Honam</au><au>Shimizu, Mariko</au><au>Okamoto, Kazuaki</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LIGHT DETECTOR, LIGHT DETECTION SYSTEM, LIDAR DEVICE, AND VEHICLE</title><date>2021-09-22</date><risdate>2021</risdate><abstract>According to one embodiment, a light detector (100) includes a first semiconductor region of a first conductivity type, a first element (11), a second element (12), an insulating body (30), a first interconnect (61), and a second interconnect (62). The second semiconductor region (2) of the first element (11) is provided on the first semiconductor region (1). The third semiconductor region (3) of the first element (11) is provided on the second semiconductor region (2), and contacts the second semiconductor region (2). The fourth semiconductor region (4) of the second element (12) is provided on the first semiconductor region (1), and has an impurity concentration of a first conductivity type less than in the second semiconductor region (2). The fifth semiconductor region (5) of the second element (12) is provided on the fourth semiconductor region (4), and contacts the fourth semiconductor region (4). The insulating body (30) is provided between the first element (11) and the second element (12). The first interconnect (61) is electrically connected to the third semiconductor region (3). The second interconnect (62) is electrically connected to the fifth semiconductor region (5).</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | LIGHT DETECTOR, LIGHT DETECTION SYSTEM, LIDAR DEVICE, AND VEHICLE |
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