METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ETCHING GAS

In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, "x" denotes an integer of three or more, and "...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ISHINO, Takaya, SASAKI, Toshiyuki, SHIMIZU, Hisashi, SHIMODA, Mitsuharu
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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