METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ETCHING GAS

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ETCHING GAS

In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, "x" denotes an integer of three or more, and "...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ISHINO, Takaya, SASAKI, Toshiyuki, SHIMIZU, Hisashi, SHIMODA, Mitsuharu
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, "x" denotes an integer of three or more, and "y" and "z" respectively denote integers of one or more. Furthermore, the CxHyFz is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.