LASER CRYSTAL WITH AT LEAST TWO CO-DOPANTS

An active laser medium for emitting a light beam by laser effect includes an X-F2-doped crystal, wherein X is a chemical element from the alkaline-earth family and F is fluorine. The crystal is doped with trivalent ions including: a first category of optically active dopant ions, in which each dopan...

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Hauptverfasser: DOUALAN, Jean-Louis, BRAUD, Alain, CAMY, Patrice, BENAYAD, Abdel, GOOSSENS, Jean-Paul
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creator DOUALAN, Jean-Louis
BRAUD, Alain
CAMY, Patrice
BENAYAD, Abdel
GOOSSENS, Jean-Paul
description An active laser medium for emitting a light beam by laser effect includes an X-F2-doped crystal, wherein X is a chemical element from the alkaline-earth family and F is fluorine. The crystal is doped with trivalent ions including: a first category of optically active dopant ions, in which each dopant ion is an ion of a first rare earth; and a second category of optically inactive dopant ions, referred to as buffer ions, in which each dopant ion is an ion of a rare earth different from the first rare earth. The second category of dopant ions has at least ions of a second rare earth and ions of a third rare earth, different from one another. The invention provides an active laser medium that can be used to obtain both a desired emission spectrum shape and a high thermal conductivity.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3850715B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3850715B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3850715B13</originalsourceid><addsrcrecordid>eNrjZNDycQx2DVJwDooMDnH0UQj3DPFQcAxR8HF1DA5RCAn3V3D213XxD3D0CwnmYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxrgHGFqYG5oamTobGRCgBAP_lJCo</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>LASER CRYSTAL WITH AT LEAST TWO CO-DOPANTS</title><source>esp@cenet</source><creator>DOUALAN, Jean-Louis ; BRAUD, Alain ; CAMY, Patrice ; BENAYAD, Abdel ; GOOSSENS, Jean-Paul</creator><creatorcontrib>DOUALAN, Jean-Louis ; BRAUD, Alain ; CAMY, Patrice ; BENAYAD, Abdel ; GOOSSENS, Jean-Paul</creatorcontrib><description>An active laser medium for emitting a light beam by laser effect includes an X-F2-doped crystal, wherein X is a chemical element from the alkaline-earth family and F is fluorine. The crystal is doped with trivalent ions including: a first category of optically active dopant ions, in which each dopant ion is an ion of a first rare earth; and a second category of optically inactive dopant ions, referred to as buffer ions, in which each dopant ion is an ion of a rare earth different from the first rare earth. The second category of dopant ions has at least ions of a second rare earth and ions of a third rare earth, different from one another. The invention provides an active laser medium that can be used to obtain both a desired emission spectrum shape and a high thermal conductivity.</description><language>eng ; fre ; ger</language><subject>ADHESIVES ; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; DEVICES USING STIMULATED EMISSION ; DYES ; ELECTRICITY ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; POLISHES ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220810&amp;DB=EPODOC&amp;CC=EP&amp;NR=3850715B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220810&amp;DB=EPODOC&amp;CC=EP&amp;NR=3850715B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DOUALAN, Jean-Louis</creatorcontrib><creatorcontrib>BRAUD, Alain</creatorcontrib><creatorcontrib>CAMY, Patrice</creatorcontrib><creatorcontrib>BENAYAD, Abdel</creatorcontrib><creatorcontrib>GOOSSENS, Jean-Paul</creatorcontrib><title>LASER CRYSTAL WITH AT LEAST TWO CO-DOPANTS</title><description>An active laser medium for emitting a light beam by laser effect includes an X-F2-doped crystal, wherein X is a chemical element from the alkaline-earth family and F is fluorine. The crystal is doped with trivalent ions including: a first category of optically active dopant ions, in which each dopant ion is an ion of a first rare earth; and a second category of optically inactive dopant ions, referred to as buffer ions, in which each dopant ion is an ion of a rare earth different from the first rare earth. The second category of dopant ions has at least ions of a second rare earth and ions of a third rare earth, different from one another. The invention provides an active laser medium that can be used to obtain both a desired emission spectrum shape and a high thermal conductivity.</description><subject>ADHESIVES</subject><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>DYES</subject><subject>ELECTRICITY</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDycQx2DVJwDooMDnH0UQj3DPFQcAxR8HF1DA5RCAn3V3D213XxD3D0CwnmYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxrgHGFqYG5oamTobGRCgBAP_lJCo</recordid><startdate>20220810</startdate><enddate>20220810</enddate><creator>DOUALAN, Jean-Louis</creator><creator>BRAUD, Alain</creator><creator>CAMY, Patrice</creator><creator>BENAYAD, Abdel</creator><creator>GOOSSENS, Jean-Paul</creator><scope>EVB</scope></search><sort><creationdate>20220810</creationdate><title>LASER CRYSTAL WITH AT LEAST TWO CO-DOPANTS</title><author>DOUALAN, Jean-Louis ; BRAUD, Alain ; CAMY, Patrice ; BENAYAD, Abdel ; GOOSSENS, Jean-Paul</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3850715B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2022</creationdate><topic>ADHESIVES</topic><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>DYES</topic><topic>ELECTRICITY</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>DOUALAN, Jean-Louis</creatorcontrib><creatorcontrib>BRAUD, Alain</creatorcontrib><creatorcontrib>CAMY, Patrice</creatorcontrib><creatorcontrib>BENAYAD, Abdel</creatorcontrib><creatorcontrib>GOOSSENS, Jean-Paul</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DOUALAN, Jean-Louis</au><au>BRAUD, Alain</au><au>CAMY, Patrice</au><au>BENAYAD, Abdel</au><au>GOOSSENS, Jean-Paul</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LASER CRYSTAL WITH AT LEAST TWO CO-DOPANTS</title><date>2022-08-10</date><risdate>2022</risdate><abstract>An active laser medium for emitting a light beam by laser effect includes an X-F2-doped crystal, wherein X is a chemical element from the alkaline-earth family and F is fluorine. The crystal is doped with trivalent ions including: a first category of optically active dopant ions, in which each dopant ion is an ion of a first rare earth; and a second category of optically inactive dopant ions, referred to as buffer ions, in which each dopant ion is an ion of a rare earth different from the first rare earth. The second category of dopant ions has at least ions of a second rare earth and ions of a third rare earth, different from one another. The invention provides an active laser medium that can be used to obtain both a desired emission spectrum shape and a high thermal conductivity.</abstract><oa>free_for_read</oa></addata></record>
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language eng ; fre ; ger
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subjects ADHESIVES
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
DEVICES USING STIMULATED EMISSION
DYES
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title LASER CRYSTAL WITH AT LEAST TWO CO-DOPANTS
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