POWER AMPLIFIER WITH DECREASED RF RETURN CURRENT LOSSES
Example embodiments relate to power amplifiers with decreased RF return current losses. One embodiment includes a RF power amplifier package that includes a semiconductor die, an input lead, first bondwire connections, second bondwire connections, and a plurality of shields. The semiconductor die in...
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| creator | ZHU, Yi CUOCO, Vittorio VOLOKHINE, Iouri VAN DER ZANDEN, Jos |
| description | Example embodiments relate to power amplifiers with decreased RF return current losses. One embodiment includes a RF power amplifier package that includes a semiconductor die, an input lead, first bondwire connections, second bondwire connections, and a plurality of shields. The semiconductor die includes an RF power transistor that includes output bond pads, input bond pads, a plurality of input fingers, and a plurality of output fingers. Further, each shield of the plurality of shields is arranged in between a respective input finger of the plurality of input fingers and a respective output finger of the plurality of output fingers and extending along with said respective input finger and output finger. In addition, each shield of the plurality of shields is connected to a ground terminal of the RF power transistor. The input fingers, output fingers, and shields are formed using a metal layer stack of multiple metal layers. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3847696A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3847696A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3847696A13</originalsourceid><addsrcrecordid>eNrjZDAP8A93DVJw9A3w8XTzBLLCPUM8FFxcnYNcHYNdXRSC3BSCXENCg_wUnEODglz9QhR8_IODXYN5GFjTEnOKU3mhNDeDgptriLOHbmpBfnxqcUFicmpeakm8a4CxhYm5maWZo6ExEUoAACwoEg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>POWER AMPLIFIER WITH DECREASED RF RETURN CURRENT LOSSES</title><source>esp@cenet</source><creator>ZHU, Yi ; CUOCO, Vittorio ; VOLOKHINE, Iouri ; VAN DER ZANDEN, Jos</creator><creatorcontrib>ZHU, Yi ; CUOCO, Vittorio ; VOLOKHINE, Iouri ; VAN DER ZANDEN, Jos</creatorcontrib><description>Example embodiments relate to power amplifiers with decreased RF return current losses. One embodiment includes a RF power amplifier package that includes a semiconductor die, an input lead, first bondwire connections, second bondwire connections, and a plurality of shields. The semiconductor die includes an RF power transistor that includes output bond pads, input bond pads, a plurality of input fingers, and a plurality of output fingers. Further, each shield of the plurality of shields is arranged in between a respective input finger of the plurality of input fingers and a respective output finger of the plurality of output fingers and extending along with said respective input finger and output finger. In addition, each shield of the plurality of shields is connected to a ground terminal of the RF power transistor. The input fingers, output fingers, and shields are formed using a metal layer stack of multiple metal layers.</description><language>eng ; fre ; ger</language><subject>AMPLIFIERS ; BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210714&DB=EPODOC&CC=EP&NR=3847696A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210714&DB=EPODOC&CC=EP&NR=3847696A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHU, Yi</creatorcontrib><creatorcontrib>CUOCO, Vittorio</creatorcontrib><creatorcontrib>VOLOKHINE, Iouri</creatorcontrib><creatorcontrib>VAN DER ZANDEN, Jos</creatorcontrib><title>POWER AMPLIFIER WITH DECREASED RF RETURN CURRENT LOSSES</title><description>Example embodiments relate to power amplifiers with decreased RF return current losses. One embodiment includes a RF power amplifier package that includes a semiconductor die, an input lead, first bondwire connections, second bondwire connections, and a plurality of shields. The semiconductor die includes an RF power transistor that includes output bond pads, input bond pads, a plurality of input fingers, and a plurality of output fingers. Further, each shield of the plurality of shields is arranged in between a respective input finger of the plurality of input fingers and a respective output finger of the plurality of output fingers and extending along with said respective input finger and output finger. In addition, each shield of the plurality of shields is connected to a ground terminal of the RF power transistor. The input fingers, output fingers, and shields are formed using a metal layer stack of multiple metal layers.</description><subject>AMPLIFIERS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAP8A93DVJw9A3w8XTzBLLCPUM8FFxcnYNcHYNdXRSC3BSCXENCg_wUnEODglz9QhR8_IODXYN5GFjTEnOKU3mhNDeDgptriLOHbmpBfnxqcUFicmpeakm8a4CxhYm5maWZo6ExEUoAACwoEg</recordid><startdate>20210714</startdate><enddate>20210714</enddate><creator>ZHU, Yi</creator><creator>CUOCO, Vittorio</creator><creator>VOLOKHINE, Iouri</creator><creator>VAN DER ZANDEN, Jos</creator><scope>EVB</scope></search><sort><creationdate>20210714</creationdate><title>POWER AMPLIFIER WITH DECREASED RF RETURN CURRENT LOSSES</title><author>ZHU, Yi ; CUOCO, Vittorio ; VOLOKHINE, Iouri ; VAN DER ZANDEN, Jos</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3847696A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2021</creationdate><topic>AMPLIFIERS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHU, Yi</creatorcontrib><creatorcontrib>CUOCO, Vittorio</creatorcontrib><creatorcontrib>VOLOKHINE, Iouri</creatorcontrib><creatorcontrib>VAN DER ZANDEN, Jos</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHU, Yi</au><au>CUOCO, Vittorio</au><au>VOLOKHINE, Iouri</au><au>VAN DER ZANDEN, Jos</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>POWER AMPLIFIER WITH DECREASED RF RETURN CURRENT LOSSES</title><date>2021-07-14</date><risdate>2021</risdate><abstract>Example embodiments relate to power amplifiers with decreased RF return current losses. One embodiment includes a RF power amplifier package that includes a semiconductor die, an input lead, first bondwire connections, second bondwire connections, and a plurality of shields. The semiconductor die includes an RF power transistor that includes output bond pads, input bond pads, a plurality of input fingers, and a plurality of output fingers. Further, each shield of the plurality of shields is arranged in between a respective input finger of the plurality of input fingers and a respective output finger of the plurality of output fingers and extending along with said respective input finger and output finger. In addition, each shield of the plurality of shields is connected to a ground terminal of the RF power transistor. The input fingers, output fingers, and shields are formed using a metal layer stack of multiple metal layers.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | POWER AMPLIFIER WITH DECREASED RF RETURN CURRENT LOSSES |
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