PER-PIXEL DETECTOR BIAS CONTROL

A pixel includes a photo-diode, an integration capacitor arranged to receive a photo current from the photo-diode and to store charge developed from the photo current; and an injection transistor disposed between the photo-diode and the integration capacitor that controls flow of the photo current f...

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Hauptverfasser: BOEMLER, Christian M, BEUVILLE, Eric J, HARRIS, Micky, BOESCH, Ryan
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Sprache:eng ; fre ; ger
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creator BOEMLER, Christian M
BEUVILLE, Eric J
HARRIS, Micky
BOESCH, Ryan
description A pixel includes a photo-diode, an integration capacitor arranged to receive a photo current from the photo-diode and to store charge developed from the photo current; and an injection transistor disposed between the photo-diode and the integration capacitor that controls flow of the photo current from the photo-diode to the integration capacitor, the injection transistor having a gate, a source electrically coupled to the photo-diode at a first node, and a drain electrically coupled to the integration capacitor. The injection transistor is a silicon-oxide-nitride-oxide-silicon (SONOS) FET having its gate set to a SONOS gate voltage to control a detector bias voltage of the photo-diode at the first node.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
title PER-PIXEL DETECTOR BIAS CONTROL
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