SEMICONDUCTOR SWITCH ELEMENT AND METHOD OF MANUFACTURING THE SAME
The application relates to a semiconductor switch element (10), comprising a first vertical transistor device (1.1) formed in a substrate (8), having a source region formed on a first side of the substrate and a drain region (4.1) formed on a second side of the substrate, vertically opposite to the...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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