SEMICONDUCTOR SWITCH ELEMENT AND METHOD OF MANUFACTURING THE SAME

The application relates to a semiconductor switch element (10), comprising a first vertical transistor device (1.1) formed in a substrate (8), having a source region formed on a first side of the substrate and a drain region (4.1) formed on a second side of the substrate, vertically opposite to the...

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Bibliographische Detailangaben
Hauptverfasser: Oszinda, Thomas, Ananiev, Sergey, Leomant, Sylvain, Noebauer, Gerhard, Gruber, Christian
Format: Patent
Sprache:eng ; fre ; ger
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