METHOD FOR MANUFACTURING A SENSOR DEVICE WITH A BURIED DEEP TRENCH STRUCTURE AND SENSOR DEVICE

According to an embodiment, a method 100 for manufacturing a sensor device with a buried deep trench structure 50, comprises: providing 110 a semiconductor substrate 10 having a sensing region 14, which extends vertically below a main surface region 12 of the semiconductor substrate 10 into the semi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	FEICK, Henning, OFFENBERG, Dirk, BINDER, Boris, GLEMET, Magali
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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