RADIO FREQUENCY SILICON ON INSULATOR STRUCTURE WITH SUPERIOR PERFORMANCE, STABILITY, AND MANUFACTURABILITY

A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.

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Hauptverfasser:	SEACRIST, Michael R, SREEDHARAMURTHY, Hariprasad, JENSEN, Leif, LIBBERT, Jeffrey L, STANDLEY, Robert W
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	SEACRIST, Michael R SREEDHARAMURTHY, Hariprasad JENSEN, Leif LIBBERT, Jeffrey L STANDLEY, Robert W
description	A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
format	Patent
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language	eng ; fre ; ger
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	RADIO FREQUENCY SILICON ON INSULATOR STRUCTURE WITH SUPERIOR PERFORMANCE, STABILITY, AND MANUFACTURABILITY
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