IMAGE SENSOR WITH LIGHT BLOCKING LAYER

An image sensor may include a substrate having a first surface and a second surface on opposite sides, a first transistor having a first gate disposed on the first surface, a photoelectric conversion layer which generates photocharges from light incident in a first direction, a second transistor hav...

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Hauptverfasser: PARK, Sang Chun, JEON, Jae Hoon, LEE, Tae Yon, LEE, Gwi Deok Ryan, LEE, Jae Kyu, CHU, Myung Lae
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Sprache:eng ; fre ; ger
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creator PARK, Sang Chun
JEON, Jae Hoon
LEE, Tae Yon
LEE, Gwi Deok Ryan
LEE, Jae Kyu
CHU, Myung Lae
description An image sensor may include a substrate having a first surface and a second surface on opposite sides, a first transistor having a first gate disposed on the first surface, a photoelectric conversion layer which generates photocharges from light incident in a first direction, a second transistor having a transistor structure disposed between the first surface and the photoelectric conversion layer and spaced from the photoelectric conversion layer, and includes a semiconductor layer composed of a metal oxide semiconductor material. The semiconductor layer may have a third surface facing the first direction and a fourth surface opposite the third surface, with a second gate disposed on the semiconductor layer. The semiconductor layer may be connected to the first gate. A light blocking layer may be disposed between the third surface and the photoelectric conversion layer, and spaced from the photoelectric conversion layer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title IMAGE SENSOR WITH LIGHT BLOCKING LAYER
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