ENGINEERED CURRENT-DENSITY PROFILE DIODE LASER

ENGINEERED CURRENT-DENSITY PROFILE DIODE LASER

The present technology can be used to control the current injection profile in the longitudinal direction of a high-power diode laser in order to optimize current densities as a function of position in the cavity to promote higher reliable output power and increase the electrical to optical conversi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: PATRA, Susant K, LEISHER, Paul O, DERI, Robert J
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator PATRA, Susant K
LEISHER, Paul O
DERI, Robert J
description The present technology can be used to control the current injection profile in the longitudinal direction of a high-power diode laser in order to optimize current densities as a function of position in the cavity to promote higher reliable output power and increase the electrical to optical conversion efficiency of the device beyond the level which can be achieved without application of this technique. This approach can be utilized, e.g., in the fabrication of semiconductor laser chips to improve the output power and wall plug efficiency for applications requiring improved performance operation.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3776762B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3776762B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3776762B13</originalsourceid><addsrcrecordid>eNrjZNBz9XP39HN1DXJ1UXAODQpy9QvRdXH1C_YMiVQICPJ38_RxVXDx9HdxVfBxDHYN4mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8a4BxubmZuZmRk6GxkQoAQCmaCV-</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ENGINEERED CURRENT-DENSITY PROFILE DIODE LASER</title><source>esp@cenet</source><creator>PATRA, Susant K ; LEISHER, Paul O ; DERI, Robert J</creator><creatorcontrib>PATRA, Susant K ; LEISHER, Paul O ; DERI, Robert J</creatorcontrib><description>The present technology can be used to control the current injection profile in the longitudinal direction of a high-power diode laser in order to optimize current densities as a function of position in the cavity to promote higher reliable output power and increase the electrical to optical conversion efficiency of the device beyond the level which can be achieved without application of this technique. This approach can be utilized, e.g., in the fabrication of semiconductor laser chips to improve the output power and wall plug efficiency for applications requiring improved performance operation.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRICITY</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240904&amp;DB=EPODOC&amp;CC=EP&amp;NR=3776762B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240904&amp;DB=EPODOC&amp;CC=EP&amp;NR=3776762B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PATRA, Susant K</creatorcontrib><creatorcontrib>LEISHER, Paul O</creatorcontrib><creatorcontrib>DERI, Robert J</creatorcontrib><title>ENGINEERED CURRENT-DENSITY PROFILE DIODE LASER</title><description>The present technology can be used to control the current injection profile in the longitudinal direction of a high-power diode laser in order to optimize current densities as a function of position in the cavity to promote higher reliable output power and increase the electrical to optical conversion efficiency of the device beyond the level which can be achieved without application of this technique. This approach can be utilized, e.g., in the fabrication of semiconductor laser chips to improve the output power and wall plug efficiency for applications requiring improved performance operation.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNBz9XP39HN1DXJ1UXAODQpy9QvRdXH1C_YMiVQICPJ38_RxVXDx9HdxVfBxDHYN4mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8a4BxubmZuZmRk6GxkQoAQCmaCV-</recordid><startdate>20240904</startdate><enddate>20240904</enddate><creator>PATRA, Susant K</creator><creator>LEISHER, Paul O</creator><creator>DERI, Robert J</creator><scope>EVB</scope></search><sort><creationdate>20240904</creationdate><title>ENGINEERED CURRENT-DENSITY PROFILE DIODE LASER</title><author>PATRA, Susant K ; LEISHER, Paul O ; DERI, Robert J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3776762B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>PATRA, Susant K</creatorcontrib><creatorcontrib>LEISHER, Paul O</creatorcontrib><creatorcontrib>DERI, Robert J</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PATRA, Susant K</au><au>LEISHER, Paul O</au><au>DERI, Robert J</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ENGINEERED CURRENT-DENSITY PROFILE DIODE LASER</title><date>2024-09-04</date><risdate>2024</risdate><abstract>The present technology can be used to control the current injection profile in the longitudinal direction of a high-power diode laser in order to optimize current densities as a function of position in the cavity to promote higher reliable output power and increase the electrical to optical conversion efficiency of the device beyond the level which can be achieved without application of this technique. This approach can be utilized, e.g., in the fabrication of semiconductor laser chips to improve the output power and wall plug efficiency for applications requiring improved performance operation.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre ; ger
recordid cdi_epo_espacenet_EP3776762B1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
title ENGINEERED CURRENT-DENSITY PROFILE DIODE LASER
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T17%3A20%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=PATRA,%20Susant%20K&rft.date=2024-09-04&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP3776762B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true