SEMICONDUCTOR DEVICE AND TERMINAL DEVICE

This application discloses a semiconductor device and a manufacturing method. The device uses a groove-gate structure and a double-longitudinal RESURF technology using a longitudinal field plate and a longitudinal P-N structure, and a channel is disposed on a bottom of a groove, so that a drift regi...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	WANG, Huaifeng
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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