SEMICONDUCTOR SUBSTRATE MEMBER
A power converter is embodied on a semiconductor substrate member and has a first region with a passive electrical component with a first electrically conductive layer pattern of an electrically conductive material and a second electrically conductive layer pattern of an electrically conductive mate...
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| creator | NOUR, Yasser A. A LÊ THANH, Hoà |
| description | A power converter is embodied on a semiconductor substrate member and has a first region with a passive electrical component with a first electrically conductive layer pattern of an electrically conductive material and a second electrically conductive layer pattern of an electrically conductive material deposited on respective sides of the semiconductor substrate member. A trench or through-hole is formed (by etching) in the substrate within the first region, and the electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first conductive layer pattern and the second conductive layer pattern. A second region has an active semiconductor component integrated with the semiconductor substrate by being fabricated by a semiconductor fabrication process. There is also provided a power supply, such as a DC-DC converter, embedded the semiconductor substrate member. |
| format | Patent |
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A ; LÊ THANH, Hoà</creatorcontrib><description>A power converter is embodied on a semiconductor substrate member and has a first region with a passive electrical component with a first electrically conductive layer pattern of an electrically conductive material and a second electrically conductive layer pattern of an electrically conductive material deposited on respective sides of the semiconductor substrate member. A trench or through-hole is formed (by etching) in the substrate within the first region, and the electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first conductive layer pattern and the second conductive layer pattern. A second region has an active semiconductor component integrated with the semiconductor substrate by being fabricated by a semiconductor fabrication process. There is also provided a power supply, such as a DC-DC converter, embedded the semiconductor substrate member.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRICITY ; INDUCTANCES ; MAGNETS ; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES ; TRANSFORMERS</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230719&DB=EPODOC&CC=EP&NR=3750174C0$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230719&DB=EPODOC&CC=EP&NR=3750174C0$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NOUR, Yasser A. A</creatorcontrib><creatorcontrib>LÊ THANH, Hoà</creatorcontrib><title>SEMICONDUCTOR SUBSTRATE MEMBER</title><description>A power converter is embodied on a semiconductor substrate member and has a first region with a passive electrical component with a first electrically conductive layer pattern of an electrically conductive material and a second electrically conductive layer pattern of an electrically conductive material deposited on respective sides of the semiconductor substrate member. A trench or through-hole is formed (by etching) in the substrate within the first region, and the electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first conductive layer pattern and the second conductive layer pattern. A second region has an active semiconductor component integrated with the semiconductor substrate by being fabricated by a semiconductor fabrication process. There is also provided a power supply, such as a DC-DC converter, embedded the semiconductor substrate member.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRICITY</subject><subject>INDUCTANCES</subject><subject>MAGNETS</subject><subject>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</subject><subject>TRANSFORMERS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJALdvX1dPb3cwl1DvEPUggOdQoOCXIMcVXwdfV1cg3iYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxrgHG5qYGhuYmzgbGRCgBAJCXITk</recordid><startdate>20230719</startdate><enddate>20230719</enddate><creator>NOUR, Yasser A. A</creator><creator>LÊ THANH, Hoà</creator><scope>EVB</scope></search><sort><creationdate>20230719</creationdate><title>SEMICONDUCTOR SUBSTRATE MEMBER</title><author>NOUR, Yasser A. A ; LÊ THANH, Hoà</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3750174C03</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRICITY</topic><topic>INDUCTANCES</topic><topic>MAGNETS</topic><topic>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</topic><topic>TRANSFORMERS</topic><toplevel>online_resources</toplevel><creatorcontrib>NOUR, Yasser A. A</creatorcontrib><creatorcontrib>LÊ THANH, Hoà</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NOUR, Yasser A. A</au><au>LÊ THANH, Hoà</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR SUBSTRATE MEMBER</title><date>2023-07-19</date><risdate>2023</risdate><abstract>A power converter is embodied on a semiconductor substrate member and has a first region with a passive electrical component with a first electrically conductive layer pattern of an electrically conductive material and a second electrically conductive layer pattern of an electrically conductive material deposited on respective sides of the semiconductor substrate member. A trench or through-hole is formed (by etching) in the substrate within the first region, and the electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first conductive layer pattern and the second conductive layer pattern. 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| language | eng ; fre ; ger |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRICITY INDUCTANCES MAGNETS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES TRANSFORMERS |
| title | SEMICONDUCTOR SUBSTRATE MEMBER |
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