SEMICONDUCTOR DEVICE

In an embodiment, a semiconductor device is provided that comprises a main transistor having a load path, a sense transistor for sensing a main current flowing in the load path of the main transistor and at least one bypass diode structure for protecting the sense transistor. The at least one bypass...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Gasser, Florian, Noebauer, Gerhard
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Gasser, Florian
Noebauer, Gerhard
description In an embodiment, a semiconductor device is provided that comprises a main transistor having a load path, a sense transistor for sensing a main current flowing in the load path of the main transistor and at least one bypass diode structure for protecting the sense transistor. The at least one bypass diode structure is electrically coupled in parallel with the sense transistor.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3736864A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3736864A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3736864A13</originalsourceid><addsrcrecordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAcbmxmYWZiaOhsZEKAEASY8eXA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>Gasser, Florian ; Noebauer, Gerhard</creator><creatorcontrib>Gasser, Florian ; Noebauer, Gerhard</creatorcontrib><description>In an embodiment, a semiconductor device is provided that comprises a main transistor having a load path, a sense transistor for sensing a main current flowing in the load path of the main transistor and at least one bypass diode structure for protecting the sense transistor. The at least one bypass diode structure is electrically coupled in parallel with the sense transistor.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20201111&amp;DB=EPODOC&amp;CC=EP&amp;NR=3736864A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20201111&amp;DB=EPODOC&amp;CC=EP&amp;NR=3736864A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Gasser, Florian</creatorcontrib><creatorcontrib>Noebauer, Gerhard</creatorcontrib><title>SEMICONDUCTOR DEVICE</title><description>In an embodiment, a semiconductor device is provided that comprises a main transistor having a load path, a sense transistor for sensing a main current flowing in the load path of the main transistor and at least one bypass diode structure for protecting the sense transistor. The at least one bypass diode structure is electrically coupled in parallel with the sense transistor.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAcbmxmYWZiaOhsZEKAEASY8eXA</recordid><startdate>20201111</startdate><enddate>20201111</enddate><creator>Gasser, Florian</creator><creator>Noebauer, Gerhard</creator><scope>EVB</scope></search><sort><creationdate>20201111</creationdate><title>SEMICONDUCTOR DEVICE</title><author>Gasser, Florian ; Noebauer, Gerhard</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3736864A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Gasser, Florian</creatorcontrib><creatorcontrib>Noebauer, Gerhard</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Gasser, Florian</au><au>Noebauer, Gerhard</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE</title><date>2020-11-11</date><risdate>2020</risdate><abstract>In an embodiment, a semiconductor device is provided that comprises a main transistor having a load path, a sense transistor for sensing a main current flowing in the load path of the main transistor and at least one bypass diode structure for protecting the sense transistor. The at least one bypass diode structure is electrically coupled in parallel with the sense transistor.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre ; ger
recordid cdi_epo_espacenet_EP3736864A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T03%3A27%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Gasser,%20Florian&rft.date=2020-11-11&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP3736864A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true