VIRTUAL WAFER TECHNIQUES FOR FABRICATING SEMICONDUCTOR DEVICES
A method of fabricating semiconductor devices including epitaxially depositing a heavily doped substrate layer that is substantially free of crystalline defects on a lightly doped virtual substrate. The device regions of the semiconductor devices can be fabricated about the heavily doped substrate l...
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| creator | Shibib, Ayman M Terrill, Kyle |
| description | A method of fabricating semiconductor devices including epitaxially depositing a heavily doped substrate layer that is substantially free of crystalline defects on a lightly doped virtual substrate. The device regions of the semiconductor devices can be fabricated about the heavily doped substrate layer before the lightly doped virtual substrate is removed. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3730676A2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3730676A2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3730676A23</originalsourceid><addsrcrecordid>eNrjZLAL8wwKCXX0UQh3dHMNUghxdfbw8wwMdQ1WcPMPUnBzdArydHYM8fRzVwh29fV09vdzCXUOAcq4uIZ5OrsG8zCwpiXmFKfyQmluBgU31xBnD93Ugvz41OKCxOTUvNSSeNcAY3NjAzNzM0cjYyKUAAAoQSoH</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>VIRTUAL WAFER TECHNIQUES FOR FABRICATING SEMICONDUCTOR DEVICES</title><source>esp@cenet</source><creator>Shibib, Ayman M ; Terrill, Kyle</creator><creatorcontrib>Shibib, Ayman M ; Terrill, Kyle</creatorcontrib><description>A method of fabricating semiconductor devices including epitaxially depositing a heavily doped substrate layer that is substantially free of crystalline defects on a lightly doped virtual substrate. The device regions of the semiconductor devices can be fabricated about the heavily doped substrate layer before the lightly doped virtual substrate is removed.</description><language>eng ; fre ; ger</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201028&DB=EPODOC&CC=EP&NR=3730676A2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201028&DB=EPODOC&CC=EP&NR=3730676A2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Shibib, Ayman M</creatorcontrib><creatorcontrib>Terrill, Kyle</creatorcontrib><title>VIRTUAL WAFER TECHNIQUES FOR FABRICATING SEMICONDUCTOR DEVICES</title><description>A method of fabricating semiconductor devices including epitaxially depositing a heavily doped substrate layer that is substantially free of crystalline defects on a lightly doped virtual substrate. The device regions of the semiconductor devices can be fabricated about the heavily doped substrate layer before the lightly doped virtual substrate is removed.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAL8wwKCXX0UQh3dHMNUghxdfbw8wwMdQ1WcPMPUnBzdArydHYM8fRzVwh29fV09vdzCXUOAcq4uIZ5OrsG8zCwpiXmFKfyQmluBgU31xBnD93Ugvz41OKCxOTUvNSSeNcAY3NjAzNzM0cjYyKUAAAoQSoH</recordid><startdate>20201028</startdate><enddate>20201028</enddate><creator>Shibib, Ayman M</creator><creator>Terrill, Kyle</creator><scope>EVB</scope></search><sort><creationdate>20201028</creationdate><title>VIRTUAL WAFER TECHNIQUES FOR FABRICATING SEMICONDUCTOR DEVICES</title><author>Shibib, Ayman M ; Terrill, Kyle</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3730676A23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2020</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>Shibib, Ayman M</creatorcontrib><creatorcontrib>Terrill, Kyle</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Shibib, Ayman M</au><au>Terrill, Kyle</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>VIRTUAL WAFER TECHNIQUES FOR FABRICATING SEMICONDUCTOR DEVICES</title><date>2020-10-28</date><risdate>2020</risdate><abstract>A method of fabricating semiconductor devices including epitaxially depositing a heavily doped substrate layer that is substantially free of crystalline defects on a lightly doped virtual substrate. The device regions of the semiconductor devices can be fabricated about the heavily doped substrate layer before the lightly doped virtual substrate is removed.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | VIRTUAL WAFER TECHNIQUES FOR FABRICATING SEMICONDUCTOR DEVICES |
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