PHOTODIODE WITH SENSITIVITY CONTROL USING A FURTHER DEPLETION REGION

A diode, comprising: a first doped structure, doped with a first type of material and forming at least part of an isolation structure for the diode; at least one contact structure located within the first doped structure, the at least one contact structure forming one of the cathode or anode of the...

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Bibliographische Detailangaben

1. Verfasser:	MOORE, John Kevin
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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