SULFONIUM SALTS OF DNTT AND RELATED COMPOUNDS AS SOLUBLE PHOTOCLEAVABLE PRECURSORS FOR ORGANIC SEMICONDUCTORS FOR USE IN ORGANIC FIELD-EFFECT TRANSISTORS

SULFONIUM SALTS OF DNTT AND RELATED COMPOUNDS AS SOLUBLE PHOTOCLEAVABLE PRECURSORS FOR ORGANIC SEMICONDUCTORS FOR USE IN ORGANIC FIELD-EFFECT TRANSISTORS

The present invention provides a process for manufacturing an electronic device comprising a semiconducting layer, which process comprises i) a step of applying a composition comprising at least a compound of formulae (1A)-(1B)-(1C) on a precursor of the electronic device in order to form a layer, a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YAMATO, Hitoshi, DOI, Iori, TSUDA, Takuya, NEKELSON, Fabien
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
HETEROCYCLIC COMPOUNDS
METALLURGY
ORGANIC CHEMISTRY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator YAMATO, Hitoshi
DOI, Iori
TSUDA, Takuya
NEKELSON, Fabien
description The present invention provides a process for manufacturing an electronic device comprising a semiconducting layer, which process comprises i) a step of applying a composition comprising at least a compound of formulae (1A)-(1B)-(1C) on a precursor of the electronic device in order to form a layer, and ii) a step of treating the layer of step i) with light in order to form a semiconducting layer, we well as a compound of formula 1A, 1B or 1C, compositions comprising at least one compound of formula 1A, 1B or 1C, and the use of at least one compound of formula 1A, 1B or 1C as photocleavable precursor for organic semiconducting materials.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3713946B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3713946B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3713946B13</originalsourceid><addsrcrecordid>eNqNykEKwjAQheFuXIh6h7lAF6WiuEyTiQbSTMlM3JYicSVaqJfxtqKoa1ePn_fNiwcnbym41AIrLwxkwQQRUMFARK8EDWhqO0rBMCgGJp8aj9AdSEh7VEf1zog6RabIYCkCxb0KTgNj6zQFk7R8r8QILvyEdehNidaiFpCoAjt-2WUxOw-XKa8-uyjAouhDmcdbn6dxOOVrvvfY1duq3q03TVX_QZ5rNkMv</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SULFONIUM SALTS OF DNTT AND RELATED COMPOUNDS AS SOLUBLE PHOTOCLEAVABLE PRECURSORS FOR ORGANIC SEMICONDUCTORS FOR USE IN ORGANIC FIELD-EFFECT TRANSISTORS</title><source>esp@cenet</source><creator>YAMATO, Hitoshi ; DOI, Iori ; TSUDA, Takuya ; NEKELSON, Fabien</creator><creatorcontrib>YAMATO, Hitoshi ; DOI, Iori ; TSUDA, Takuya ; NEKELSON, Fabien</creatorcontrib><description>The present invention provides a process for manufacturing an electronic device comprising a semiconducting layer, which process comprises i) a step of applying a composition comprising at least a compound of formulae (1A)-(1B)-(1C) on a precursor of the electronic device in order to form a layer, and ii) a step of treating the layer of step i) with light in order to form a semiconducting layer, we well as a compound of formula 1A, 1B or 1C, compositions comprising at least one compound of formula 1A, 1B or 1C, and the use of at least one compound of formula 1A, 1B or 1C as photocleavable precursor for organic semiconducting materials.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; HETEROCYCLIC COMPOUNDS ; METALLURGY ; ORGANIC CHEMISTRY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210908&amp;DB=EPODOC&amp;CC=EP&amp;NR=3713946B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25566,76549</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210908&amp;DB=EPODOC&amp;CC=EP&amp;NR=3713946B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMATO, Hitoshi</creatorcontrib><creatorcontrib>DOI, Iori</creatorcontrib><creatorcontrib>TSUDA, Takuya</creatorcontrib><creatorcontrib>NEKELSON, Fabien</creatorcontrib><title>SULFONIUM SALTS OF DNTT AND RELATED COMPOUNDS AS SOLUBLE PHOTOCLEAVABLE PRECURSORS FOR ORGANIC SEMICONDUCTORS FOR USE IN ORGANIC FIELD-EFFECT TRANSISTORS</title><description>The present invention provides a process for manufacturing an electronic device comprising a semiconducting layer, which process comprises i) a step of applying a composition comprising at least a compound of formulae (1A)-(1B)-(1C) on a precursor of the electronic device in order to form a layer, and ii) a step of treating the layer of step i) with light in order to form a semiconducting layer, we well as a compound of formula 1A, 1B or 1C, compositions comprising at least one compound of formula 1A, 1B or 1C, and the use of at least one compound of formula 1A, 1B or 1C as photocleavable precursor for organic semiconducting materials.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>HETEROCYCLIC COMPOUNDS</subject><subject>METALLURGY</subject><subject>ORGANIC CHEMISTRY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNykEKwjAQheFuXIh6h7lAF6WiuEyTiQbSTMlM3JYicSVaqJfxtqKoa1ePn_fNiwcnbym41AIrLwxkwQQRUMFARK8EDWhqO0rBMCgGJp8aj9AdSEh7VEf1zog6RabIYCkCxb0KTgNj6zQFk7R8r8QILvyEdehNidaiFpCoAjt-2WUxOw-XKa8-uyjAouhDmcdbn6dxOOVrvvfY1duq3q03TVX_QZ5rNkMv</recordid><startdate>20210908</startdate><enddate>20210908</enddate><creator>YAMATO, Hitoshi</creator><creator>DOI, Iori</creator><creator>TSUDA, Takuya</creator><creator>NEKELSON, Fabien</creator><scope>EVB</scope></search><sort><creationdate>20210908</creationdate><title>SULFONIUM SALTS OF DNTT AND RELATED COMPOUNDS AS SOLUBLE PHOTOCLEAVABLE PRECURSORS FOR ORGANIC SEMICONDUCTORS FOR USE IN ORGANIC FIELD-EFFECT TRANSISTORS</title><author>YAMATO, Hitoshi ; DOI, Iori ; TSUDA, Takuya ; NEKELSON, Fabien</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3713946B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>HETEROCYCLIC COMPOUNDS</topic><topic>METALLURGY</topic><topic>ORGANIC CHEMISTRY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMATO, Hitoshi</creatorcontrib><creatorcontrib>DOI, Iori</creatorcontrib><creatorcontrib>TSUDA, Takuya</creatorcontrib><creatorcontrib>NEKELSON, Fabien</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMATO, Hitoshi</au><au>DOI, Iori</au><au>TSUDA, Takuya</au><au>NEKELSON, Fabien</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SULFONIUM SALTS OF DNTT AND RELATED COMPOUNDS AS SOLUBLE PHOTOCLEAVABLE PRECURSORS FOR ORGANIC SEMICONDUCTORS FOR USE IN ORGANIC FIELD-EFFECT TRANSISTORS</title><date>2021-09-08</date><risdate>2021</risdate><abstract>The present invention provides a process for manufacturing an electronic device comprising a semiconducting layer, which process comprises i) a step of applying a composition comprising at least a compound of formulae (1A)-(1B)-(1C) on a precursor of the electronic device in order to form a layer, and ii) a step of treating the layer of step i) with light in order to form a semiconducting layer, we well as a compound of formula 1A, 1B or 1C, compositions comprising at least one compound of formula 1A, 1B or 1C, and the use of at least one compound of formula 1A, 1B or 1C as photocleavable precursor for organic semiconducting materials.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre ; ger
recordid cdi_epo_espacenet_EP3713946B1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
HETEROCYCLIC COMPOUNDS
METALLURGY
ORGANIC CHEMISTRY
SEMICONDUCTOR DEVICES
title SULFONIUM SALTS OF DNTT AND RELATED COMPOUNDS AS SOLUBLE PHOTOCLEAVABLE PRECURSORS FOR ORGANIC SEMICONDUCTORS FOR USE IN ORGANIC FIELD-EFFECT TRANSISTORS
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T17%3A12%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YAMATO,%20Hitoshi&rft.date=2021-09-08&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP3713946B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true