INTEGRATED CIRCUIT, METHOD FOR MANUFACTURING SAME, AND RADIO COMMUNICATION DEVICE USING SAME

An object of the present invention is to provide an excellent integrated circuit by a simple process. The present invention is an integrated circuit, which includes at least a memory array that stores data, a rectifying circuit that rectifies an alternating current and generates a direct-current voltage, and a logic circuit that reads data stored in a memory and in which the memory array includes a first semiconductor element having a first semiconductor layer, the rectifying circuit includes a second semiconductor element having a second semiconductor layer, the logic circuit includes a third semiconductor element having a third semiconductor layer, the first semiconductor element is a memory element, the second semiconductor element is a rectifying element, the third semiconductor element is a logic element, the second semiconductor layer is a functional layer exhibiting a rectifying action, the third semiconductor layer is a channel layer of a logic element, and all of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer and all of the functional layer exhibiting a rectifying action and the channel layer are formed of the same material including at least one selected from an organic semiconductor, a carbon nanotube, graphene, or fullerene.