SPUTTERING SYSTEM AND METHOD FOR FORMING A METAL LAYER ON A SEMICONDUCTOR DEVICE

A method for sputtering an aluminum layer on a surface of a semiconductor device is presented. The method includes three sputtering steps for depositing the aluminum layer, where each sputtering step includes at least one sputtering parameter that is different from a corresponding sputtering paramet...

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Bibliographische Detailangaben
Hauptverfasser: KENNERLY, Stacey Joy, TORRES, Victor, DUDOFF, Gregory Keith, GOSSMAN, Robert Dwayne, LILIENFELD, David
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A method for sputtering an aluminum layer on a surface of a semiconductor device is presented. The method includes three sputtering steps for depositing the aluminum layer, where each sputtering step includes at least one sputtering parameter that is different from a corresponding sputtering parameter of another sputtering step. The surface of the semiconductor device includes a dielectric layer having a plurality of openings formed through the dielectric layer.