MEMORY UNIT AND STATIC RANDOM ACCESS MEMORY

A storage unit and a static random access memory are provided. The storage unit includes a latch, and the latch provides a first storage bit. The storage unit further includes a first MOS transistor. A gate of the first MOS transistor is connected to the first storage bit, a source of the first MOS...

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Bibliographische Detailangaben
Hauptverfasser: ZHOU, Yunming, CHI, Sijie, JI, Bingwu, ZHAO, Tanfu
Format: Patent
Sprache:eng ; fre ; ger
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