SEMICONDUCTOR DEVICE

Provided is an IGBT capable of achieving both low conduction loss and low switching loss in the IGBT and achieving low power consumption, and a power conversion device to which the IGBT is applied. The semiconductor device includes a first conductivity type semiconductor layer formed on a first main...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MIYOSHI, Tomoyuki, TAKEUCHI, Yujiro, MORI, Mutsuhiro, FURUKAWA, Tomoyasu
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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