SEMICONDUCTOR PACKAGE

A semiconductor package including a first device layer including first semiconductor devices, a first cover insulating layer, and first through-electrodes passing through at least a portion of the first device layer, a second device layer second semiconductor devices, a second cover insulating layer...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Park, Jin-woo, Hong, Ji-seok
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Park, Jin-woo
Hong, Ji-seok
description A semiconductor package including a first device layer including first semiconductor devices, a first cover insulating layer, and first through-electrodes passing through at least a portion of the first device layer, a second device layer second semiconductor devices, a second cover insulating layer, and second through-electrodes passing through at least a portion of the second device layer, the second semiconductor devices vertically overlapping the first semiconductor devices, respectively, the second cover insulating layer in contact with the first cover insulating layer a third device layer including an upper semiconductor chip, the upper semiconductor chip vertically overlapping both at least two of first semiconductor devices and at least two of the second semiconductor devices, and device bonded pads passing through the first and second cover insulating layers, the device bonded pads electrically connecting the first and second through-electrodes to the upper semiconductor chip may be provided.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3618114B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3618114B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3618114B13</originalsourceid><addsrcrecordid>eNrjZBANdvX1dPb3cwl1DvEPUghwdPZ2dHflYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxrgHGZoYWhoYmTobGRCgBAGHeHoE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR PACKAGE</title><source>esp@cenet</source><creator>Park, Jin-woo ; Hong, Ji-seok</creator><creatorcontrib>Park, Jin-woo ; Hong, Ji-seok</creatorcontrib><description>A semiconductor package including a first device layer including first semiconductor devices, a first cover insulating layer, and first through-electrodes passing through at least a portion of the first device layer, a second device layer second semiconductor devices, a second cover insulating layer, and second through-electrodes passing through at least a portion of the second device layer, the second semiconductor devices vertically overlapping the first semiconductor devices, respectively, the second cover insulating layer in contact with the first cover insulating layer a third device layer including an upper semiconductor chip, the upper semiconductor chip vertically overlapping both at least two of first semiconductor devices and at least two of the second semiconductor devices, and device bonded pads passing through the first and second cover insulating layers, the device bonded pads electrically connecting the first and second through-electrodes to the upper semiconductor chip may be provided.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20211222&amp;DB=EPODOC&amp;CC=EP&amp;NR=3618114B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20211222&amp;DB=EPODOC&amp;CC=EP&amp;NR=3618114B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Park, Jin-woo</creatorcontrib><creatorcontrib>Hong, Ji-seok</creatorcontrib><title>SEMICONDUCTOR PACKAGE</title><description>A semiconductor package including a first device layer including first semiconductor devices, a first cover insulating layer, and first through-electrodes passing through at least a portion of the first device layer, a second device layer second semiconductor devices, a second cover insulating layer, and second through-electrodes passing through at least a portion of the second device layer, the second semiconductor devices vertically overlapping the first semiconductor devices, respectively, the second cover insulating layer in contact with the first cover insulating layer a third device layer including an upper semiconductor chip, the upper semiconductor chip vertically overlapping both at least two of first semiconductor devices and at least two of the second semiconductor devices, and device bonded pads passing through the first and second cover insulating layers, the device bonded pads electrically connecting the first and second through-electrodes to the upper semiconductor chip may be provided.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBANdvX1dPb3cwl1DvEPUghwdPZ2dHflYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxrgHGZoYWhoYmTobGRCgBAGHeHoE</recordid><startdate>20211222</startdate><enddate>20211222</enddate><creator>Park, Jin-woo</creator><creator>Hong, Ji-seok</creator><scope>EVB</scope></search><sort><creationdate>20211222</creationdate><title>SEMICONDUCTOR PACKAGE</title><author>Park, Jin-woo ; Hong, Ji-seok</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3618114B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Park, Jin-woo</creatorcontrib><creatorcontrib>Hong, Ji-seok</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Park, Jin-woo</au><au>Hong, Ji-seok</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR PACKAGE</title><date>2021-12-22</date><risdate>2021</risdate><abstract>A semiconductor package including a first device layer including first semiconductor devices, a first cover insulating layer, and first through-electrodes passing through at least a portion of the first device layer, a second device layer second semiconductor devices, a second cover insulating layer, and second through-electrodes passing through at least a portion of the second device layer, the second semiconductor devices vertically overlapping the first semiconductor devices, respectively, the second cover insulating layer in contact with the first cover insulating layer a third device layer including an upper semiconductor chip, the upper semiconductor chip vertically overlapping both at least two of first semiconductor devices and at least two of the second semiconductor devices, and device bonded pads passing through the first and second cover insulating layers, the device bonded pads electrically connecting the first and second through-electrodes to the upper semiconductor chip may be provided.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre ; ger
recordid cdi_epo_espacenet_EP3618114B1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR PACKAGE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T14%3A22%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Park,%20Jin-woo&rft.date=2021-12-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP3618114B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true