INTEGRATING SILICON-BJT TO A SILICON-GERMANIUM-HBT MANUFACTURING PROCESS

This specification discloses methods for integrating a SiGe-based HBT (100, heterojunction bipolar transistor) and a Si-based BJT (200, bipolar junction transistor) together in a single manufacturing process that does not add a lot of process complexity, and an integrated circuit that can be fabrica...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Magnee, Petrus Hubertus Cornelis, Donkers, Johannes Josephus Theodorus Marinus, van Dijk, Pieter Simon, Abessolo Bidzo, Dolphin
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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