IODINE-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES

A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFy...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ROYER, James, SURLA, Vijay, PALLEM, Venkateswara R, GUPTA, Rahul, STAFFORD, Nathan, SUN, Hui, MARCHEGIANI, Fabrizio, OMARJEE, Vincent M
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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