SEMICONDUCTOR DEVICE

According to an embodiment, a semiconductor device includes a first metal plate, a second metal plate, and two or more semiconductor units. The two or more semiconductor units are disposed on the first metal plate. The each of the two or more semiconductor units includes a first metal member, a seco...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: WATANABE, Naotake, IIO, Naotaka, SEKIYA, Hiroki, ITO, Hiroaki, OHBU, Toshiharu, HIRATSUKA, Daisuke, TAKIMOTO, Kazuyasu, HISAZATO, Yuuji, TADA, Nobumitsu, MATSUMURA, Hitoshi, ICHIKURA, Yuta, YAMANARI, Naoki
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator WATANABE, Naotake
IIO, Naotaka
SEKIYA, Hiroki
ITO, Hiroaki
OHBU, Toshiharu
HIRATSUKA, Daisuke
TAKIMOTO, Kazuyasu
HISAZATO, Yuuji
TADA, Nobumitsu
MATSUMURA, Hitoshi
ICHIKURA, Yuta
YAMANARI, Naoki
description According to an embodiment, a semiconductor device includes a first metal plate, a second metal plate, and two or more semiconductor units. The two or more semiconductor units are disposed on the first metal plate. The each of the two or more semiconductor units includes a first metal member, a second metal member, and a semiconductor element. The first metal member has a first connection surface connected to the first major surface. The second metal member has a second connection surface connected to the second major surface. The semiconductor element includes an active region having surfaces respectively opposing the first connection surface and the second connection surface. A surface area of the first connection surface is greater than a surface area of the surface of the active region opposing the first connection surface. A surface area of the second connection surface is greater than a surface area of the surface of the active region opposing the second connection surface.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3553820A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3553820A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3553820A13</originalsourceid><addsrcrecordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAcampsYWRgaOhsZEKAEAR5geRg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>WATANABE, Naotake ; IIO, Naotaka ; SEKIYA, Hiroki ; ITO, Hiroaki ; OHBU, Toshiharu ; HIRATSUKA, Daisuke ; TAKIMOTO, Kazuyasu ; HISAZATO, Yuuji ; TADA, Nobumitsu ; MATSUMURA, Hitoshi ; ICHIKURA, Yuta ; YAMANARI, Naoki</creator><creatorcontrib>WATANABE, Naotake ; IIO, Naotaka ; SEKIYA, Hiroki ; ITO, Hiroaki ; OHBU, Toshiharu ; HIRATSUKA, Daisuke ; TAKIMOTO, Kazuyasu ; HISAZATO, Yuuji ; TADA, Nobumitsu ; MATSUMURA, Hitoshi ; ICHIKURA, Yuta ; YAMANARI, Naoki</creatorcontrib><description>According to an embodiment, a semiconductor device includes a first metal plate, a second metal plate, and two or more semiconductor units. The two or more semiconductor units are disposed on the first metal plate. The each of the two or more semiconductor units includes a first metal member, a second metal member, and a semiconductor element. The first metal member has a first connection surface connected to the first major surface. The second metal member has a second connection surface connected to the second major surface. The semiconductor element includes an active region having surfaces respectively opposing the first connection surface and the second connection surface. A surface area of the first connection surface is greater than a surface area of the surface of the active region opposing the first connection surface. A surface area of the second connection surface is greater than a surface area of the surface of the active region opposing the second connection surface.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20191016&amp;DB=EPODOC&amp;CC=EP&amp;NR=3553820A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20191016&amp;DB=EPODOC&amp;CC=EP&amp;NR=3553820A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WATANABE, Naotake</creatorcontrib><creatorcontrib>IIO, Naotaka</creatorcontrib><creatorcontrib>SEKIYA, Hiroki</creatorcontrib><creatorcontrib>ITO, Hiroaki</creatorcontrib><creatorcontrib>OHBU, Toshiharu</creatorcontrib><creatorcontrib>HIRATSUKA, Daisuke</creatorcontrib><creatorcontrib>TAKIMOTO, Kazuyasu</creatorcontrib><creatorcontrib>HISAZATO, Yuuji</creatorcontrib><creatorcontrib>TADA, Nobumitsu</creatorcontrib><creatorcontrib>MATSUMURA, Hitoshi</creatorcontrib><creatorcontrib>ICHIKURA, Yuta</creatorcontrib><creatorcontrib>YAMANARI, Naoki</creatorcontrib><title>SEMICONDUCTOR DEVICE</title><description>According to an embodiment, a semiconductor device includes a first metal plate, a second metal plate, and two or more semiconductor units. The two or more semiconductor units are disposed on the first metal plate. The each of the two or more semiconductor units includes a first metal member, a second metal member, and a semiconductor element. The first metal member has a first connection surface connected to the first major surface. The second metal member has a second connection surface connected to the second major surface. The semiconductor element includes an active region having surfaces respectively opposing the first connection surface and the second connection surface. A surface area of the first connection surface is greater than a surface area of the surface of the active region opposing the first connection surface. A surface area of the second connection surface is greater than a surface area of the surface of the active region opposing the second connection surface.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAcampsYWRgaOhsZEKAEAR5geRg</recordid><startdate>20191016</startdate><enddate>20191016</enddate><creator>WATANABE, Naotake</creator><creator>IIO, Naotaka</creator><creator>SEKIYA, Hiroki</creator><creator>ITO, Hiroaki</creator><creator>OHBU, Toshiharu</creator><creator>HIRATSUKA, Daisuke</creator><creator>TAKIMOTO, Kazuyasu</creator><creator>HISAZATO, Yuuji</creator><creator>TADA, Nobumitsu</creator><creator>MATSUMURA, Hitoshi</creator><creator>ICHIKURA, Yuta</creator><creator>YAMANARI, Naoki</creator><scope>EVB</scope></search><sort><creationdate>20191016</creationdate><title>SEMICONDUCTOR DEVICE</title><author>WATANABE, Naotake ; IIO, Naotaka ; SEKIYA, Hiroki ; ITO, Hiroaki ; OHBU, Toshiharu ; HIRATSUKA, Daisuke ; TAKIMOTO, Kazuyasu ; HISAZATO, Yuuji ; TADA, Nobumitsu ; MATSUMURA, Hitoshi ; ICHIKURA, Yuta ; YAMANARI, Naoki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3553820A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>WATANABE, Naotake</creatorcontrib><creatorcontrib>IIO, Naotaka</creatorcontrib><creatorcontrib>SEKIYA, Hiroki</creatorcontrib><creatorcontrib>ITO, Hiroaki</creatorcontrib><creatorcontrib>OHBU, Toshiharu</creatorcontrib><creatorcontrib>HIRATSUKA, Daisuke</creatorcontrib><creatorcontrib>TAKIMOTO, Kazuyasu</creatorcontrib><creatorcontrib>HISAZATO, Yuuji</creatorcontrib><creatorcontrib>TADA, Nobumitsu</creatorcontrib><creatorcontrib>MATSUMURA, Hitoshi</creatorcontrib><creatorcontrib>ICHIKURA, Yuta</creatorcontrib><creatorcontrib>YAMANARI, Naoki</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WATANABE, Naotake</au><au>IIO, Naotaka</au><au>SEKIYA, Hiroki</au><au>ITO, Hiroaki</au><au>OHBU, Toshiharu</au><au>HIRATSUKA, Daisuke</au><au>TAKIMOTO, Kazuyasu</au><au>HISAZATO, Yuuji</au><au>TADA, Nobumitsu</au><au>MATSUMURA, Hitoshi</au><au>ICHIKURA, Yuta</au><au>YAMANARI, Naoki</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE</title><date>2019-10-16</date><risdate>2019</risdate><abstract>According to an embodiment, a semiconductor device includes a first metal plate, a second metal plate, and two or more semiconductor units. The two or more semiconductor units are disposed on the first metal plate. The each of the two or more semiconductor units includes a first metal member, a second metal member, and a semiconductor element. The first metal member has a first connection surface connected to the first major surface. The second metal member has a second connection surface connected to the second major surface. The semiconductor element includes an active region having surfaces respectively opposing the first connection surface and the second connection surface. A surface area of the first connection surface is greater than a surface area of the surface of the active region opposing the first connection surface. A surface area of the second connection surface is greater than a surface area of the surface of the active region opposing the second connection surface.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre ; ger
recordid cdi_epo_espacenet_EP3553820A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-15T06%3A21%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=WATANABE,%20Naotake&rft.date=2019-10-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP3553820A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true