SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION

There is described a single crystal CVD diamond material comprising three orthogonal dimensions of at least 2 mm; one or more regions of low optical birefringence, indicative of low strain, such that in a sample of the single crystal CVD diamond material having a thickness in a range 0.5 mm to 1.0 m...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KHAN, Rizwan Uddin Ahmad, TWITCHEN, Daniel James, DHILLON, Harpreet Kaur
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator KHAN, Rizwan Uddin Ahmad
TWITCHEN, Daniel James
DHILLON, Harpreet Kaur
description There is described a single crystal CVD diamond material comprising three orthogonal dimensions of at least 2 mm; one or more regions of low optical birefringence, indicative of low strain, such that in a sample of the single crystal CVD diamond material having a thickness in a range 0.5 mm to 1.0 mm and an area of greater than 1.3 mm×1.3 mm and measured using a pixel size of area in a range 1×1 μm2 to 20×20 μm2, a maximum value of Δn[average] does not exceed 1.5×10−4 for the one or more regions of low optical birefringence, where Δn[average] is an average value of a difference between refractive index for light polarised parallel to slow and fast axes averaged over the sample thickness; one or more regions of high optical birefringence, indicative of high strain, such that in said sample of the single crystal CVD diamond material and measured using said pixel size, Δn[average] is greater than 1.5×10−4 and less than 3×10−3; and is wherein every 1.3 mm×1.3 mm area of the sample of the single crystal CVD diamond material comprises at least one of said regions of high optical birefringence. There is also described a method of making the CVD diamond material.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3548651B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3548651B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3548651B13</originalsourceid><addsrcrecordid>eNrjZPAI9vRz93FVcA6KDA5x9FEIjvQL8XAN8XRWcPF09PX3c1HwdQxxDfIESoV5Oio4e7j6ejqDOI4B_qFBCi6uAf7BniGe_n48DKxpiTnFqbxQmptBwc01xNlDN7UgPz61uCAxOTUvtSTeNcDY1MTCzNTQydCYCCUAymMstA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION</title><source>esp@cenet</source><creator>KHAN, Rizwan Uddin Ahmad ; TWITCHEN, Daniel James ; DHILLON, Harpreet Kaur</creator><creatorcontrib>KHAN, Rizwan Uddin Ahmad ; TWITCHEN, Daniel James ; DHILLON, Harpreet Kaur</creatorcontrib><description>There is described a single crystal CVD diamond material comprising three orthogonal dimensions of at least 2 mm; one or more regions of low optical birefringence, indicative of low strain, such that in a sample of the single crystal CVD diamond material having a thickness in a range 0.5 mm to 1.0 mm and an area of greater than 1.3 mm×1.3 mm and measured using a pixel size of area in a range 1×1 μm2 to 20×20 μm2, a maximum value of Δn[average] does not exceed 1.5×10−4 for the one or more regions of low optical birefringence, where Δn[average] is an average value of a difference between refractive index for light polarised parallel to slow and fast axes averaged over the sample thickness; one or more regions of high optical birefringence, indicative of high strain, such that in said sample of the single crystal CVD diamond material and measured using said pixel size, Δn[average] is greater than 1.5×10−4 and less than 3×10−3; and is wherein every 1.3 mm×1.3 mm area of the sample of the single crystal CVD diamond material comprises at least one of said regions of high optical birefringence. There is also described a method of making the CVD diamond material.</description><language>eng ; fre ; ger</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200819&amp;DB=EPODOC&amp;CC=EP&amp;NR=3548651B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200819&amp;DB=EPODOC&amp;CC=EP&amp;NR=3548651B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KHAN, Rizwan Uddin Ahmad</creatorcontrib><creatorcontrib>TWITCHEN, Daniel James</creatorcontrib><creatorcontrib>DHILLON, Harpreet Kaur</creatorcontrib><title>SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION</title><description>There is described a single crystal CVD diamond material comprising three orthogonal dimensions of at least 2 mm; one or more regions of low optical birefringence, indicative of low strain, such that in a sample of the single crystal CVD diamond material having a thickness in a range 0.5 mm to 1.0 mm and an area of greater than 1.3 mm×1.3 mm and measured using a pixel size of area in a range 1×1 μm2 to 20×20 μm2, a maximum value of Δn[average] does not exceed 1.5×10−4 for the one or more regions of low optical birefringence, where Δn[average] is an average value of a difference between refractive index for light polarised parallel to slow and fast axes averaged over the sample thickness; one or more regions of high optical birefringence, indicative of high strain, such that in said sample of the single crystal CVD diamond material and measured using said pixel size, Δn[average] is greater than 1.5×10−4 and less than 3×10−3; and is wherein every 1.3 mm×1.3 mm area of the sample of the single crystal CVD diamond material comprises at least one of said regions of high optical birefringence. There is also described a method of making the CVD diamond material.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAI9vRz93FVcA6KDA5x9FEIjvQL8XAN8XRWcPF09PX3c1HwdQxxDfIESoV5Oio4e7j6ejqDOI4B_qFBCi6uAf7BniGe_n48DKxpiTnFqbxQmptBwc01xNlDN7UgPz61uCAxOTUvtSTeNcDY1MTCzNTQydCYCCUAymMstA</recordid><startdate>20200819</startdate><enddate>20200819</enddate><creator>KHAN, Rizwan Uddin Ahmad</creator><creator>TWITCHEN, Daniel James</creator><creator>DHILLON, Harpreet Kaur</creator><scope>EVB</scope></search><sort><creationdate>20200819</creationdate><title>SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION</title><author>KHAN, Rizwan Uddin Ahmad ; TWITCHEN, Daniel James ; DHILLON, Harpreet Kaur</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3548651B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2020</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>KHAN, Rizwan Uddin Ahmad</creatorcontrib><creatorcontrib>TWITCHEN, Daniel James</creatorcontrib><creatorcontrib>DHILLON, Harpreet Kaur</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KHAN, Rizwan Uddin Ahmad</au><au>TWITCHEN, Daniel James</au><au>DHILLON, Harpreet Kaur</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION</title><date>2020-08-19</date><risdate>2020</risdate><abstract>There is described a single crystal CVD diamond material comprising three orthogonal dimensions of at least 2 mm; one or more regions of low optical birefringence, indicative of low strain, such that in a sample of the single crystal CVD diamond material having a thickness in a range 0.5 mm to 1.0 mm and an area of greater than 1.3 mm×1.3 mm and measured using a pixel size of area in a range 1×1 μm2 to 20×20 μm2, a maximum value of Δn[average] does not exceed 1.5×10−4 for the one or more regions of low optical birefringence, where Δn[average] is an average value of a difference between refractive index for light polarised parallel to slow and fast axes averaged over the sample thickness; one or more regions of high optical birefringence, indicative of high strain, such that in said sample of the single crystal CVD diamond material and measured using said pixel size, Δn[average] is greater than 1.5×10−4 and less than 3×10−3; and is wherein every 1.3 mm×1.3 mm area of the sample of the single crystal CVD diamond material comprises at least one of said regions of high optical birefringence. There is also described a method of making the CVD diamond material.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre ; ger
recordid cdi_epo_espacenet_EP3548651B1
source esp@cenet
subjects AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
CRYSTAL GROWTH
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T10%3A43%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KHAN,%20Rizwan%20Uddin%20Ahmad&rft.date=2020-08-19&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP3548651B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true