ADVANCED HYDROGEN PASSIVATION THAT MITIGATES HYDROGEN-INDUCED RECOMBINATION (HIR) AND SURFACE PASSIVATION DETERIORATION IN PV DEVICES

The present disclosure provides methodologies for manufacturing photovoltaic devices. In particular, the disclosure relates to the use of hydrogen during manufacturing of photovoltaic devices for passivating defects in the silicon and addressing light-induced degradation. The methodologies in the pr...

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Hauptverfasser: WENHAM, Stuart Ross, HALLAM, Brett Jason, CHONG, Chee Mun, CHEN, Daniel, PAYNE, David Neil, MAI, Ly, CHAN, Catherine Emily, CHEN, Ran, BAGNALL, Darren, SHI, Zhengrong, KIM, Moonyong, FUNG, Tsun Hang, ABBOTT, Malcolm David, CIESLA, Alison
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creator WENHAM, Stuart Ross
HALLAM, Brett Jason
CHONG, Chee Mun
CHEN, Daniel
PAYNE, David Neil
MAI, Ly
CHAN, Catherine Emily
CHEN, Ran
BAGNALL, Darren
SHI, Zhengrong
KIM, Moonyong
FUNG, Tsun Hang
ABBOTT, Malcolm David
CIESLA, Alison
description The present disclosure provides methodologies for manufacturing photovoltaic devices. In particular, the disclosure relates to the use of hydrogen during manufacturing of photovoltaic devices for passivating defects in the silicon and addressing light-induced degradation. The methodologies in the present disclosures take advantage of generation and manipulation of hydrogen in the neutral or charged state to optimise defect passivation. Some of the methodologies disclose use thermal treatments, illumination with sub-bandgap photons, electric fields or defects in the silicon to control the state of charge or hydrogen, move hydrogen to different locations in the device or retain hydrogen at specific locations.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3545545A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3545545A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3545545A13</originalsourceid><addsrcrecordid>eNqNjcEKwjAQRHvxIOo_5KiHHqT2A9Zk2-yhSUm2AU-lSDyJFuov-N9GKoI3YWDY4c3OMnuCCmAkKqFPytkajWjBewrAZI1gDSwaYqqB0X-ZnIzq3iWH0jZHMjO91eR2AowSvnMVSPz5pZDRkXXzRWkopCyQRL_OFpfhOsXNx1eZqJClzuN47-M0Dud4i48e26I8lEmwL_5AXktnPV4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ADVANCED HYDROGEN PASSIVATION THAT MITIGATES HYDROGEN-INDUCED RECOMBINATION (HIR) AND SURFACE PASSIVATION DETERIORATION IN PV DEVICES</title><source>esp@cenet</source><creator>WENHAM, Stuart Ross ; HALLAM, Brett Jason ; CHONG, Chee Mun ; CHEN, Daniel ; PAYNE, David Neil ; MAI, Ly ; CHAN, Catherine Emily ; CHEN, Ran ; BAGNALL, Darren ; SHI, Zhengrong ; KIM, Moonyong ; FUNG, Tsun Hang ; ABBOTT, Malcolm David ; CIESLA, Alison</creator><creatorcontrib>WENHAM, Stuart Ross ; HALLAM, Brett Jason ; CHONG, Chee Mun ; CHEN, Daniel ; PAYNE, David Neil ; MAI, Ly ; CHAN, Catherine Emily ; CHEN, Ran ; BAGNALL, Darren ; SHI, Zhengrong ; KIM, Moonyong ; FUNG, Tsun Hang ; ABBOTT, Malcolm David ; CIESLA, Alison</creatorcontrib><description>The present disclosure provides methodologies for manufacturing photovoltaic devices. In particular, the disclosure relates to the use of hydrogen during manufacturing of photovoltaic devices for passivating defects in the silicon and addressing light-induced degradation. The methodologies in the present disclosures take advantage of generation and manipulation of hydrogen in the neutral or charged state to optimise defect passivation. Some of the methodologies disclose use thermal treatments, illumination with sub-bandgap photons, electric fields or defects in the silicon to control the state of charge or hydrogen, move hydrogen to different locations in the device or retain hydrogen at specific locations.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20191002&amp;DB=EPODOC&amp;CC=EP&amp;NR=3545545A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20191002&amp;DB=EPODOC&amp;CC=EP&amp;NR=3545545A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WENHAM, Stuart Ross</creatorcontrib><creatorcontrib>HALLAM, Brett Jason</creatorcontrib><creatorcontrib>CHONG, Chee Mun</creatorcontrib><creatorcontrib>CHEN, Daniel</creatorcontrib><creatorcontrib>PAYNE, David Neil</creatorcontrib><creatorcontrib>MAI, Ly</creatorcontrib><creatorcontrib>CHAN, Catherine Emily</creatorcontrib><creatorcontrib>CHEN, Ran</creatorcontrib><creatorcontrib>BAGNALL, Darren</creatorcontrib><creatorcontrib>SHI, Zhengrong</creatorcontrib><creatorcontrib>KIM, Moonyong</creatorcontrib><creatorcontrib>FUNG, Tsun Hang</creatorcontrib><creatorcontrib>ABBOTT, Malcolm David</creatorcontrib><creatorcontrib>CIESLA, Alison</creatorcontrib><title>ADVANCED HYDROGEN PASSIVATION THAT MITIGATES HYDROGEN-INDUCED RECOMBINATION (HIR) AND SURFACE PASSIVATION DETERIORATION IN PV DEVICES</title><description>The present disclosure provides methodologies for manufacturing photovoltaic devices. In particular, the disclosure relates to the use of hydrogen during manufacturing of photovoltaic devices for passivating defects in the silicon and addressing light-induced degradation. The methodologies in the present disclosures take advantage of generation and manipulation of hydrogen in the neutral or charged state to optimise defect passivation. Some of the methodologies disclose use thermal treatments, illumination with sub-bandgap photons, electric fields or defects in the silicon to control the state of charge or hydrogen, move hydrogen to different locations in the device or retain hydrogen at specific locations.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjcEKwjAQRHvxIOo_5KiHHqT2A9Zk2-yhSUm2AU-lSDyJFuov-N9GKoI3YWDY4c3OMnuCCmAkKqFPytkajWjBewrAZI1gDSwaYqqB0X-ZnIzq3iWH0jZHMjO91eR2AowSvnMVSPz5pZDRkXXzRWkopCyQRL_OFpfhOsXNx1eZqJClzuN47-M0Dud4i48e26I8lEmwL_5AXktnPV4</recordid><startdate>20191002</startdate><enddate>20191002</enddate><creator>WENHAM, Stuart Ross</creator><creator>HALLAM, Brett Jason</creator><creator>CHONG, Chee Mun</creator><creator>CHEN, Daniel</creator><creator>PAYNE, David Neil</creator><creator>MAI, Ly</creator><creator>CHAN, Catherine Emily</creator><creator>CHEN, Ran</creator><creator>BAGNALL, Darren</creator><creator>SHI, Zhengrong</creator><creator>KIM, Moonyong</creator><creator>FUNG, Tsun Hang</creator><creator>ABBOTT, Malcolm David</creator><creator>CIESLA, Alison</creator><scope>EVB</scope></search><sort><creationdate>20191002</creationdate><title>ADVANCED HYDROGEN PASSIVATION THAT MITIGATES HYDROGEN-INDUCED RECOMBINATION (HIR) AND SURFACE PASSIVATION DETERIORATION IN PV DEVICES</title><author>WENHAM, Stuart Ross ; HALLAM, Brett Jason ; CHONG, Chee Mun ; CHEN, Daniel ; PAYNE, David Neil ; MAI, Ly ; CHAN, Catherine Emily ; CHEN, Ran ; BAGNALL, Darren ; SHI, Zhengrong ; KIM, Moonyong ; FUNG, Tsun Hang ; ABBOTT, Malcolm David ; CIESLA, Alison</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3545545A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>WENHAM, Stuart Ross</creatorcontrib><creatorcontrib>HALLAM, Brett Jason</creatorcontrib><creatorcontrib>CHONG, Chee Mun</creatorcontrib><creatorcontrib>CHEN, Daniel</creatorcontrib><creatorcontrib>PAYNE, David Neil</creatorcontrib><creatorcontrib>MAI, Ly</creatorcontrib><creatorcontrib>CHAN, Catherine Emily</creatorcontrib><creatorcontrib>CHEN, Ran</creatorcontrib><creatorcontrib>BAGNALL, Darren</creatorcontrib><creatorcontrib>SHI, Zhengrong</creatorcontrib><creatorcontrib>KIM, Moonyong</creatorcontrib><creatorcontrib>FUNG, Tsun Hang</creatorcontrib><creatorcontrib>ABBOTT, Malcolm David</creatorcontrib><creatorcontrib>CIESLA, Alison</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WENHAM, Stuart Ross</au><au>HALLAM, Brett Jason</au><au>CHONG, Chee Mun</au><au>CHEN, Daniel</au><au>PAYNE, David Neil</au><au>MAI, Ly</au><au>CHAN, Catherine Emily</au><au>CHEN, Ran</au><au>BAGNALL, Darren</au><au>SHI, Zhengrong</au><au>KIM, Moonyong</au><au>FUNG, Tsun Hang</au><au>ABBOTT, Malcolm David</au><au>CIESLA, Alison</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ADVANCED HYDROGEN PASSIVATION THAT MITIGATES HYDROGEN-INDUCED RECOMBINATION (HIR) AND SURFACE PASSIVATION DETERIORATION IN PV DEVICES</title><date>2019-10-02</date><risdate>2019</risdate><abstract>The present disclosure provides methodologies for manufacturing photovoltaic devices. In particular, the disclosure relates to the use of hydrogen during manufacturing of photovoltaic devices for passivating defects in the silicon and addressing light-induced degradation. The methodologies in the present disclosures take advantage of generation and manipulation of hydrogen in the neutral or charged state to optimise defect passivation. Some of the methodologies disclose use thermal treatments, illumination with sub-bandgap photons, electric fields or defects in the silicon to control the state of charge or hydrogen, move hydrogen to different locations in the device or retain hydrogen at specific locations.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title ADVANCED HYDROGEN PASSIVATION THAT MITIGATES HYDROGEN-INDUCED RECOMBINATION (HIR) AND SURFACE PASSIVATION DETERIORATION IN PV DEVICES
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