UV RADIATION METHOD FOR ARSENIC OUTGASSING CONTROL IN SUB 7NM CMOS FABRICATION

Implementations disclosed herein relate to methods for controlling substrate outgassing of hazardous gasses after an epitaxial process. In one implementation, the method includes providing a substrate comprising an epitaxial layer into a transfer chamber, wherein the transfer chamber has an ultravio...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YAN, Chun, CHU, Schubert S, CHUNG, Hua, BAO, Xinyu
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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