PACKAGED RF POWER AMPLIFIER HAVING A HIGH POWER DENSITY
A packaged RF power amplifier comprises an output network coupled to the output of a RF power transistor, which output network comprises a plurality of first bondwires extending along a first direction between the output of transistor and an output lead of the package, a series connection of a secon...
Gespeichert in:
| Hauptverfasser: | , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre ; ger |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | DE BOET, Johannes Adrianus Maria VAN ZUIJLEN, Albertus Gerardus WilhelmusPhilipus ZHU, Yi CUOCO, Vittorio VAN DER ZANDEN, Josephus HenricusBartholomeus VOLOKHINE, Yuri SVESHTAROV, Iordan Konstantinov |
| description | A packaged RF power amplifier comprises an output network coupled to the output of a RF power transistor, which output network comprises a plurality of first bondwires extending along a first direction between the output of transistor and an output lead of the package, a series connection of a second inductor and a first capacitor between the output of the RF power transistor and ground, and a series connection of a third inductor and a second capacitor connected in between ground and the junction between the second inductor and the first capacitor. The first and second capacitors are integrated on a single passive die and the third inductor comprises a first part and a second part connected in series, wherein the first part extends at least partially along the first direction, and wherein the second part extends at least partially in a direction opposite to the first direction. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3504792A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3504792A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3504792A13</originalsourceid><addsrcrecordid>eNrjZDAPcHT2dnR3dVEIclMI8A93DVJw9A3w8XTzBLI8HMM8_dwVHBU8PN09oLIurn7BniGRPAysaYk5xam8UJqbQcHNNcTZQze1ID8-tbggMTk1L7Uk3jXA2NTAxNzSyNHQmAglAMRxJ3s</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PACKAGED RF POWER AMPLIFIER HAVING A HIGH POWER DENSITY</title><source>esp@cenet</source><creator>DE BOET, Johannes Adrianus Maria ; VAN ZUIJLEN, Albertus Gerardus WilhelmusPhilipus ; ZHU, Yi ; CUOCO, Vittorio ; VAN DER ZANDEN, Josephus HenricusBartholomeus ; VOLOKHINE, Yuri ; SVESHTAROV, Iordan Konstantinov</creator><creatorcontrib>DE BOET, Johannes Adrianus Maria ; VAN ZUIJLEN, Albertus Gerardus WilhelmusPhilipus ; ZHU, Yi ; CUOCO, Vittorio ; VAN DER ZANDEN, Josephus HenricusBartholomeus ; VOLOKHINE, Yuri ; SVESHTAROV, Iordan Konstantinov</creatorcontrib><description>A packaged RF power amplifier comprises an output network coupled to the output of a RF power transistor, which output network comprises a plurality of first bondwires extending along a first direction between the output of transistor and an output lead of the package, a series connection of a second inductor and a first capacitor between the output of the RF power transistor and ground, and a series connection of a third inductor and a second capacitor connected in between ground and the junction between the second inductor and the first capacitor. The first and second capacitors are integrated on a single passive die and the third inductor comprises a first part and a second part connected in series, wherein the first part extends at least partially along the first direction, and wherein the second part extends at least partially in a direction opposite to the first direction.</description><language>eng ; fre ; ger</language><subject>AMPLIFIERS ; BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190703&DB=EPODOC&CC=EP&NR=3504792A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190703&DB=EPODOC&CC=EP&NR=3504792A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DE BOET, Johannes Adrianus Maria</creatorcontrib><creatorcontrib>VAN ZUIJLEN, Albertus Gerardus WilhelmusPhilipus</creatorcontrib><creatorcontrib>ZHU, Yi</creatorcontrib><creatorcontrib>CUOCO, Vittorio</creatorcontrib><creatorcontrib>VAN DER ZANDEN, Josephus HenricusBartholomeus</creatorcontrib><creatorcontrib>VOLOKHINE, Yuri</creatorcontrib><creatorcontrib>SVESHTAROV, Iordan Konstantinov</creatorcontrib><title>PACKAGED RF POWER AMPLIFIER HAVING A HIGH POWER DENSITY</title><description>A packaged RF power amplifier comprises an output network coupled to the output of a RF power transistor, which output network comprises a plurality of first bondwires extending along a first direction between the output of transistor and an output lead of the package, a series connection of a second inductor and a first capacitor between the output of the RF power transistor and ground, and a series connection of a third inductor and a second capacitor connected in between ground and the junction between the second inductor and the first capacitor. The first and second capacitors are integrated on a single passive die and the third inductor comprises a first part and a second part connected in series, wherein the first part extends at least partially along the first direction, and wherein the second part extends at least partially in a direction opposite to the first direction.</description><subject>AMPLIFIERS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAPcHT2dnR3dVEIclMI8A93DVJw9A3w8XTzBLI8HMM8_dwVHBU8PN09oLIurn7BniGRPAysaYk5xam8UJqbQcHNNcTZQze1ID8-tbggMTk1L7Uk3jXA2NTAxNzSyNHQmAglAMRxJ3s</recordid><startdate>20190703</startdate><enddate>20190703</enddate><creator>DE BOET, Johannes Adrianus Maria</creator><creator>VAN ZUIJLEN, Albertus Gerardus WilhelmusPhilipus</creator><creator>ZHU, Yi</creator><creator>CUOCO, Vittorio</creator><creator>VAN DER ZANDEN, Josephus HenricusBartholomeus</creator><creator>VOLOKHINE, Yuri</creator><creator>SVESHTAROV, Iordan Konstantinov</creator><scope>EVB</scope></search><sort><creationdate>20190703</creationdate><title>PACKAGED RF POWER AMPLIFIER HAVING A HIGH POWER DENSITY</title><author>DE BOET, Johannes Adrianus Maria ; VAN ZUIJLEN, Albertus Gerardus WilhelmusPhilipus ; ZHU, Yi ; CUOCO, Vittorio ; VAN DER ZANDEN, Josephus HenricusBartholomeus ; VOLOKHINE, Yuri ; SVESHTAROV, Iordan Konstantinov</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3504792A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2019</creationdate><topic>AMPLIFIERS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>DE BOET, Johannes Adrianus Maria</creatorcontrib><creatorcontrib>VAN ZUIJLEN, Albertus Gerardus WilhelmusPhilipus</creatorcontrib><creatorcontrib>ZHU, Yi</creatorcontrib><creatorcontrib>CUOCO, Vittorio</creatorcontrib><creatorcontrib>VAN DER ZANDEN, Josephus HenricusBartholomeus</creatorcontrib><creatorcontrib>VOLOKHINE, Yuri</creatorcontrib><creatorcontrib>SVESHTAROV, Iordan Konstantinov</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DE BOET, Johannes Adrianus Maria</au><au>VAN ZUIJLEN, Albertus Gerardus WilhelmusPhilipus</au><au>ZHU, Yi</au><au>CUOCO, Vittorio</au><au>VAN DER ZANDEN, Josephus HenricusBartholomeus</au><au>VOLOKHINE, Yuri</au><au>SVESHTAROV, Iordan Konstantinov</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PACKAGED RF POWER AMPLIFIER HAVING A HIGH POWER DENSITY</title><date>2019-07-03</date><risdate>2019</risdate><abstract>A packaged RF power amplifier comprises an output network coupled to the output of a RF power transistor, which output network comprises a plurality of first bondwires extending along a first direction between the output of transistor and an output lead of the package, a series connection of a second inductor and a first capacitor between the output of the RF power transistor and ground, and a series connection of a third inductor and a second capacitor connected in between ground and the junction between the second inductor and the first capacitor. The first and second capacitors are integrated on a single passive die and the third inductor comprises a first part and a second part connected in series, wherein the first part extends at least partially along the first direction, and wherein the second part extends at least partially in a direction opposite to the first direction.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; fre ; ger |
| recordid | cdi_epo_espacenet_EP3504792A1 |
| source | esp@cenet |
| subjects | AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | PACKAGED RF POWER AMPLIFIER HAVING A HIGH POWER DENSITY |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-19T07%3A24%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=DE%20BOET,%20Johannes%20Adrianus%20Maria&rft.date=2019-07-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP3504792A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |