BULB-SHAPED MEMORY STACK STRUCTURES FOR DIRECT SOURCE CONTACT IN THREE-DIMENSIONAL MEMORY DEVICE

The contact area between a source strap structure of a buried source layer and semiconductor channels within memory structures can be increased by laterally expanding a source-level volume in which the memory stack structures are formed. In one embodiment, sacrificial semiconductor pedestals can be...

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Bibliographische Detailangaben

Hauptverfasser:	KITAMURA, Kento, MASAMORI, Yohei, MATSUMOTO, Kazuyo, ALSMEIER, Johann, GE, Chun, ZHANG, Yanli, KASAGI, Yasuo, KAI, James, OGAWA, Hiroyuki, YU, Jixin, MAO, Daxin, ZHANG, Tong, YAMAGUCHI, Kensuke, SHIMIZU, Satoshi
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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