ELECTRIC FIELD SHIELDING IN SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR (MOS) DEVICES HAVING AN OPTIMIZATION LAYER

The subject matter disclosed herein relates to semiconductor power devices, such as silicon carbide (SiC) power devices. In particular, the subject matter disclosed herein relates to disconnected or connected shielding regions that reduce the electric field present between the well regions of neighb...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BOLOTNIKOV, Alexander, Viktorovich, LOSEE, Peter, Almern
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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