STABLE POWER DEVICES ON LOW-ANGLE OFF-CUT SILICON CARBIDE CRYSTALS

A method of forming a silicon carbide-based device, comprising: forming a silicon carbide drift layer having a planar surface that forms an off-axis angle with a direction of less than 8°, wherein the silicon carbide drift layer is formed by chemical vapor deposition including a chlorine containing...

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Bibliographische Detailangaben
Hauptverfasser: O'LOUGHLIN, Michael, SUMAKERIS, Joseph, BURK, Albert, ZHANG, Qingchun, CAPELL, Doyle Craig, AGARWAL, Anant
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A method of forming a silicon carbide-based device, comprising: forming a silicon carbide drift layer having a planar surface that forms an off-axis angle with a direction of less than 8°, wherein the silicon carbide drift layer is formed by chemical vapor deposition including a chlorine containing compound.