A PHOSPHORUS DOPED SILICON SINGLE CRYSTAL

The present invention relates to a phosphorus doped silicon single crystal having a diameter of at least 175 mm and an axial length in the range of 50 mm to 1000 mm, the phosphorus doped silicon single crystal in a transverse plane having a density of dopant atoms providing a target resistivity (ρNTD) in the range of 5 Ωcm to 2000 Ωcm for a wafer cut from the phosphorus doped silicon ingot, wherein a RRV value of 3% or less as determined according to the SEMI standard SEMI MF81 is obtained for at least 75% of wafers cut from the phosphorus doped silicon single crystal when the resistivity is measured after annealing the silicon at a temperature in the range of 800°C to 1300°C, to a wafer and to a plurality of wafers cut from the phosphorus doped silicon single crystal and to a method of producing a phosphorus doped silicon single crystal. The products of the invention are particularly suited for use in high power electronics.