SUBSTITUTED CYCLOPENTADIENYL COBALT COMPLEX AND METHOD FOR PRODUCTION THEREOF
Provided is a cobalt complex which is useful for the production of a cobalt-containing thin film under conditions where no oxidizing gas is used. A cobalt complex represented by general formula (1) (wherein R 1 represents a silyloxy group represented by general formula (2) (wherein R 6 , R 7 and R 8...
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| creator | OIKE, Hiroyuki HAYAKAWA, Teppei YAMAMOTO, Yuki KOISO, Naoyuki TADA, Ken-ichi FURUKAWA, Taishi |
| description | Provided is a cobalt complex which is useful for the production of a cobalt-containing thin film under conditions where no oxidizing gas is used. A cobalt complex represented by general formula (1) (wherein R 1 represents a silyloxy group represented by general formula (2) (wherein R 6 , R 7 and R 8 independently represent an alkyl group having 1 to 6 carbon atoms); R 2 represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a silyloxy group represented by general formula (2); R 3 , R 4 and R 5 independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; and L represents a diene having 4 to 10 carbon atoms) is used. |
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A cobalt complex represented by general formula (1) (wherein R 1 represents a silyloxy group represented by general formula (2) (wherein R 6 , R 7 and R 8 independently represent an alkyl group having 1 to 6 carbon atoms); R 2 represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a silyloxy group represented by general formula (2); R 3 , R 4 and R 5 independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; and L represents a diene having 4 to 10 carbon atoms) is used.</description><language>eng ; fre ; ger</language><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; ORGANIC CHEMISTRY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230607&DB=EPODOC&CC=EP&NR=3392259B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230607&DB=EPODOC&CC=EP&NR=3392259B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OIKE, Hiroyuki</creatorcontrib><creatorcontrib>HAYAKAWA, Teppei</creatorcontrib><creatorcontrib>YAMAMOTO, Yuki</creatorcontrib><creatorcontrib>KOISO, Naoyuki</creatorcontrib><creatorcontrib>TADA, Ken-ichi</creatorcontrib><creatorcontrib>FURUKAWA, Taishi</creatorcontrib><title>SUBSTITUTED CYCLOPENTADIENYL COBALT COMPLEX AND METHOD FOR PRODUCTION THEREOF</title><description>Provided is a cobalt complex which is useful for the production of a cobalt-containing thin film under conditions where no oxidizing gas is used. 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A cobalt complex represented by general formula (1) (wherein R 1 represents a silyloxy group represented by general formula (2) (wherein R 6 , R 7 and R 8 independently represent an alkyl group having 1 to 6 carbon atoms); R 2 represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a silyloxy group represented by general formula (2); R 3 , R 4 and R 5 independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; and L represents a diene having 4 to 10 carbon atoms) is used.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SUBSTITUTED CYCLOPENTADIENYL COBALT COMPLEX AND METHOD FOR PRODUCTION THEREOF |
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