SINGLE-WAFER REAL-TIME ETCH RATE AND UNIFORMITY PREDICTOR FOR PLASMA ETCH PROCESSES

The present disclosure relates to semiconductor manufacturing, in particular to a real-time method for qualifying the etch rate for plasma etch processes. A method for testing a semiconductor plasma etch chamber may include: depositing a film on a substrate of a wafer, the wafer including a center r...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SATO, Justin Hiroki, HENNES, Brian Dee, KIMMEL, Yannick Carll
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY
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