METHOD FOR PREPARING AN ORGANIC ELECTRONIC DEVICE, ORGANIC ELECTRONIC DEVICE, AND A DEVICE COMPRISING THE SAME

The present invention relates to a method for preparing an organic electronic device comprising the steps: a) providing a layer stack applicable for preparing the organic electronic device, the layer stack comprising: aa) a light absorption layer (32); and bb) an organic semiconductor layer (33) hav...

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Hauptverfasser: Canzler, Tobias, Langguth, Oliver, Furno, Mauro
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Sprache:eng ; fre ; ger
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creator Canzler, Tobias
Langguth, Oliver
Furno, Mauro
description The present invention relates to a method for preparing an organic electronic device comprising the steps: a) providing a layer stack applicable for preparing the organic electronic device, the layer stack comprising: aa) a light absorption layer (32); and bb) an organic semiconductor layer (33) having a conductivity of at least 10 -7 S/cm and a thickness of 0.1 to 100 nm; wherein the distance between the organic semiconductor and layer the light absorption layer is selected from 0 to 500 nm; b) providing a light source; c) irradiation treatment of the light absorption layer by exposing it to light from the light source; wherein the irradiation treatment is uniform with respect to a surface area of the layer stack of at least 1 cm 2 , preferably at least 100 cm 2 ; wherein the duration of the irradiation treatment is 10 ms or less and the energy density of the irradiation treatment is from 0.1 to 20 J/cm 2 at the position of the light absorption layer; and the absorption of the light absorption layer with respect to the light irradiated from the light source is higher than the respective absorption of the organic semiconductor layer, an organic electronic device obtainable this way and a device comprising the same.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3336919B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3336919B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3336919B13</originalsourceid><addsrcrecordid>eNrjZMjzdQ3x8HdRcPMPUggIcg1wDPL0c1dw9FPwD3J39PN0VnD1cXUOCfIHMV1cwzydXXXwSTn6uSg4QnkKzv6-AUGewSADQzxcFYIdfV15GFjTEnOKU3mhNDeDgptriLOHbmpBfnxqcUFicmpeakm8a4CxsbGZpaGlk6ExEUoAkVI2Fg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR PREPARING AN ORGANIC ELECTRONIC DEVICE, ORGANIC ELECTRONIC DEVICE, AND A DEVICE COMPRISING THE SAME</title><source>esp@cenet</source><creator>Canzler, Tobias ; Langguth, Oliver ; Furno, Mauro</creator><creatorcontrib>Canzler, Tobias ; Langguth, Oliver ; Furno, Mauro</creatorcontrib><description>The present invention relates to a method for preparing an organic electronic device comprising the steps: a) providing a layer stack applicable for preparing the organic electronic device, the layer stack comprising: aa) a light absorption layer (32); and bb) an organic semiconductor layer (33) having a conductivity of at least 10 -7 S/cm and a thickness of 0.1 to 100 nm; wherein the distance between the organic semiconductor and layer the light absorption layer is selected from 0 to 500 nm; b) providing a light source; c) irradiation treatment of the light absorption layer by exposing it to light from the light source; wherein the irradiation treatment is uniform with respect to a surface area of the layer stack of at least 1 cm 2 , preferably at least 100 cm 2 ; wherein the duration of the irradiation treatment is 10 ms or less and the energy density of the irradiation treatment is from 0.1 to 20 J/cm 2 at the position of the light absorption layer; and the absorption of the light absorption layer with respect to the light irradiated from the light source is higher than the respective absorption of the organic semiconductor layer, an organic electronic device obtainable this way and a device comprising the same.</description><language>eng ; fre ; ger</language><subject>ELECTRICITY</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230222&amp;DB=EPODOC&amp;CC=EP&amp;NR=3336919B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230222&amp;DB=EPODOC&amp;CC=EP&amp;NR=3336919B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Canzler, Tobias</creatorcontrib><creatorcontrib>Langguth, Oliver</creatorcontrib><creatorcontrib>Furno, Mauro</creatorcontrib><title>METHOD FOR PREPARING AN ORGANIC ELECTRONIC DEVICE, ORGANIC ELECTRONIC DEVICE, AND A DEVICE COMPRISING THE SAME</title><description>The present invention relates to a method for preparing an organic electronic device comprising the steps: a) providing a layer stack applicable for preparing the organic electronic device, the layer stack comprising: aa) a light absorption layer (32); and bb) an organic semiconductor layer (33) having a conductivity of at least 10 -7 S/cm and a thickness of 0.1 to 100 nm; wherein the distance between the organic semiconductor and layer the light absorption layer is selected from 0 to 500 nm; b) providing a light source; c) irradiation treatment of the light absorption layer by exposing it to light from the light source; wherein the irradiation treatment is uniform with respect to a surface area of the layer stack of at least 1 cm 2 , preferably at least 100 cm 2 ; wherein the duration of the irradiation treatment is 10 ms or less and the energy density of the irradiation treatment is from 0.1 to 20 J/cm 2 at the position of the light absorption layer; and the absorption of the light absorption layer with respect to the light irradiated from the light source is higher than the respective absorption of the organic semiconductor layer, an organic electronic device obtainable this way and a device comprising the same.</description><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZMjzdQ3x8HdRcPMPUggIcg1wDPL0c1dw9FPwD3J39PN0VnD1cXUOCfIHMV1cwzydXXXwSTn6uSg4QnkKzv6-AUGewSADQzxcFYIdfV15GFjTEnOKU3mhNDeDgptriLOHbmpBfnxqcUFicmpeakm8a4CxsbGZpaGlk6ExEUoAkVI2Fg</recordid><startdate>20230222</startdate><enddate>20230222</enddate><creator>Canzler, Tobias</creator><creator>Langguth, Oliver</creator><creator>Furno, Mauro</creator><scope>EVB</scope></search><sort><creationdate>20230222</creationdate><title>METHOD FOR PREPARING AN ORGANIC ELECTRONIC DEVICE, ORGANIC ELECTRONIC DEVICE, AND A DEVICE COMPRISING THE SAME</title><author>Canzler, Tobias ; Langguth, Oliver ; Furno, Mauro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3336919B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2023</creationdate><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>Canzler, Tobias</creatorcontrib><creatorcontrib>Langguth, Oliver</creatorcontrib><creatorcontrib>Furno, Mauro</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Canzler, Tobias</au><au>Langguth, Oliver</au><au>Furno, Mauro</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR PREPARING AN ORGANIC ELECTRONIC DEVICE, ORGANIC ELECTRONIC DEVICE, AND A DEVICE COMPRISING THE SAME</title><date>2023-02-22</date><risdate>2023</risdate><abstract>The present invention relates to a method for preparing an organic electronic device comprising the steps: a) providing a layer stack applicable for preparing the organic electronic device, the layer stack comprising: aa) a light absorption layer (32); and bb) an organic semiconductor layer (33) having a conductivity of at least 10 -7 S/cm and a thickness of 0.1 to 100 nm; wherein the distance between the organic semiconductor and layer the light absorption layer is selected from 0 to 500 nm; b) providing a light source; c) irradiation treatment of the light absorption layer by exposing it to light from the light source; wherein the irradiation treatment is uniform with respect to a surface area of the layer stack of at least 1 cm 2 , preferably at least 100 cm 2 ; wherein the duration of the irradiation treatment is 10 ms or less and the energy density of the irradiation treatment is from 0.1 to 20 J/cm 2 at the position of the light absorption layer; and the absorption of the light absorption layer with respect to the light irradiated from the light source is higher than the respective absorption of the organic semiconductor layer, an organic electronic device obtainable this way and a device comprising the same.</abstract><oa>free_for_read</oa></addata></record>
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title METHOD FOR PREPARING AN ORGANIC ELECTRONIC DEVICE, ORGANIC ELECTRONIC DEVICE, AND A DEVICE COMPRISING THE SAME
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-21T17%3A43%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Canzler,%20Tobias&rft.date=2023-02-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP3336919B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true