VERTICAL BIPOLAR TRANSISTOR WITH INTEGRATED COLLECTOR RESISTOR
A semiconductor device and a method of making the same. The device includes a semiconductor substrate having a major surface and a back surface. The device also includes a bipolar transistor, in particular a Resistor Equipped Transistor. The bipolar transistor comprises a first collector region (2)...
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| creator | Habenicht, Soenke Holland, Steffen Boettcher, Tim Berglund, Stefan |
| description | A semiconductor device and a method of making the same. The device includes a semiconductor substrate having a major surface and a back surface. The device also includes a bipolar transistor, in particular a Resistor Equipped Transistor. The bipolar transistor comprises a first collector region (2) located in the semiconductor substrate, a second more highly doped collector region (22) and an electrically conductive region (23); a base region (4) located within the first collector region and positioned adjacent the major surface; an emitter region (6) located within the base region and positioned adjacent the major surface; and a collector terminal (32) connected to the electrically conductive region (23) and located on the major surface of the semiconductor substrate. The collector terminal includes: a first electrically conductive part (32) electrically connected to the collector region; an electrically resistive part, resistor, (30) electrically connected to the first electrically conductive part, and a second electrically conductive part (34) for allowing an external electrical connection to be made the collector terminal (32). The second conductive part (34) is electrically connected to the first conductive part (32) via the resistive part (30). |
| format | Patent |
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The device includes a semiconductor substrate having a major surface and a back surface. The device also includes a bipolar transistor, in particular a Resistor Equipped Transistor. The bipolar transistor comprises a first collector region (2) located in the semiconductor substrate, a second more highly doped collector region (22) and an electrically conductive region (23); a base region (4) located within the first collector region and positioned adjacent the major surface; an emitter region (6) located within the base region and positioned adjacent the major surface; and a collector terminal (32) connected to the electrically conductive region (23) and located on the major surface of the semiconductor substrate. The collector terminal includes: a first electrically conductive part (32) electrically connected to the collector region; an electrically resistive part, resistor, (30) electrically connected to the first electrically conductive part, and a second electrically conductive part (34) for allowing an external electrical connection to be made the collector terminal (32). 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The device includes a semiconductor substrate having a major surface and a back surface. The device also includes a bipolar transistor, in particular a Resistor Equipped Transistor. The bipolar transistor comprises a first collector region (2) located in the semiconductor substrate, a second more highly doped collector region (22) and an electrically conductive region (23); a base region (4) located within the first collector region and positioned adjacent the major surface; an emitter region (6) located within the base region and positioned adjacent the major surface; and a collector terminal (32) connected to the electrically conductive region (23) and located on the major surface of the semiconductor substrate. The collector terminal includes: a first electrically conductive part (32) electrically connected to the collector region; an electrically resistive part, resistor, (30) electrically connected to the first electrically conductive part, and a second electrically conductive part (34) for allowing an external electrical connection to be made the collector terminal (32). 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The device includes a semiconductor substrate having a major surface and a back surface. The device also includes a bipolar transistor, in particular a Resistor Equipped Transistor. The bipolar transistor comprises a first collector region (2) located in the semiconductor substrate, a second more highly doped collector region (22) and an electrically conductive region (23); a base region (4) located within the first collector region and positioned adjacent the major surface; an emitter region (6) located within the base region and positioned adjacent the major surface; and a collector terminal (32) connected to the electrically conductive region (23) and located on the major surface of the semiconductor substrate. The collector terminal includes: a first electrically conductive part (32) electrically connected to the collector region; an electrically resistive part, resistor, (30) electrically connected to the first electrically conductive part, and a second electrically conductive part (34) for allowing an external electrical connection to be made the collector terminal (32). The second conductive part (34) is electrically connected to the first conductive part (32) via the resistive part (30).</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | VERTICAL BIPOLAR TRANSISTOR WITH INTEGRATED COLLECTOR RESISTOR |
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