DEPOSITION MASK USING A METAL SUBSTRATE
Embodiments of the present invention relate to a mask structure applicable to a deposition process for an organic light-emitting device, etc., and allow provision of a deposition mask comprising: a first surface and a second surface which are orthogonal in the thickness direction of a metal plate an...
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| creator | MOON, Byung Youl KIM, Nam Ho ROH, Geon Ho HAN, Tae Hoon CHO, Su Hyeon LEE, Sang Beum LIM, Jeong Ryong PARK, Jae Seok SON, Hyo Won HWANG, Joo Hyun |
| description | Embodiments of the present invention relate to a mask structure applicable to a deposition process for an organic light-emitting device, etc., and allow provision of a deposition mask comprising: a first surface and a second surface which are orthogonal in the thickness direction of a metal plate and face each other; and multiple unit holes which have a first surface hole and a second surface hole which pass through the first surface and the second surface and are in connection with each other, wherein the size variation of the first surface hole or the second surface hole between neighboring unit holes is controlled within 2%-10% on the basis of the size variation between optional unit holes, or the center of the first surface hole and the center of the second surface hole are arranged at a location where the centers do not coincide with each other on the basis of the surface of the first surface. |
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HWANG, Joo Hyun</creatorcontrib><description>Embodiments of the present invention relate to a mask structure applicable to a deposition process for an organic light-emitting device, etc., and allow provision of a deposition mask comprising: a first surface and a second surface which are orthogonal in the thickness direction of a metal plate and face each other; and multiple unit holes which have a first surface hole and a second surface hole which pass through the first surface and the second surface and are in connection with each other, wherein the size variation of the first surface hole or the second surface hole between neighboring unit holes is controlled within 2%-10% on the basis of the size variation between optional unit holes, or the center of the first surface hole and the center of the second surface hole are arranged at a location where the centers do not coincide with each other on the basis of the surface of the first surface.</description><language>eng ; fre ; ger</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241023&DB=EPODOC&CC=EP&NR=3288097B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241023&DB=EPODOC&CC=EP&NR=3288097B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MOON, Byung Youl</creatorcontrib><creatorcontrib>KIM, Nam Ho</creatorcontrib><creatorcontrib>ROH, Geon Ho</creatorcontrib><creatorcontrib>HAN, Tae Hoon</creatorcontrib><creatorcontrib>CHO, Su Hyeon</creatorcontrib><creatorcontrib>LEE, Sang Beum</creatorcontrib><creatorcontrib>LIM, Jeong Ryong</creatorcontrib><creatorcontrib>PARK, Jae Seok</creatorcontrib><creatorcontrib>SON, Hyo Won</creatorcontrib><creatorcontrib>HWANG, Joo Hyun</creatorcontrib><title>DEPOSITION MASK USING A METAL SUBSTRATE</title><description>Embodiments of the present invention relate to a mask structure applicable to a deposition process for an organic light-emitting device, etc., and allow provision of a deposition mask comprising: a first surface and a second surface which are orthogonal in the thickness direction of a metal plate and face each other; 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and multiple unit holes which have a first surface hole and a second surface hole which pass through the first surface and the second surface and are in connection with each other, wherein the size variation of the first surface hole or the second surface hole between neighboring unit holes is controlled within 2%-10% on the basis of the size variation between optional unit holes, or the center of the first surface hole and the center of the second surface hole are arranged at a location where the centers do not coincide with each other on the basis of the surface of the first surface.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | DEPOSITION MASK USING A METAL SUBSTRATE |
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