METHOD OF FABRICATING A THREE DIMENSIONAL MEMORY DEVICE WITH EPITAXIAL SEMICONDUCTOR PEDESTAL FOR PERIPHERAL TRANSISTORS

A method of fabricating a memory device is provided. The method includes forming a first alternating stack of insulator layers and spacer material layers over a semiconductor substrate, etching the first alternating stack to expose a single crystalline semiconductor material, forming a first epitaxi...

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Bibliographische Detailangaben

Hauptverfasser:	HU, Xiaolong, SHI, Wenguang, MATAMIS, George, LIN, Andrew, LU, Zhenyu, ARIYOSHI, Junichi, ALSMEIER, Johann, YU, Jixin, MAO, Daxin, MIYATA, Koji, XU, Jiyin
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ELECTRICITY
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