SILICON-BASED MOLTEN COMPOSITION AND METHOD FOR MANUFACTURING SIC SINGLE CRYSTALS USING SAME

Provided is a silicon-based molten composition including silicon, carbon, and a metal in which a solubility parameter (C si sol ) defined by Equation (1) below is less than -0.37, wherein a SiC single crystal is formed by a solution method: C si sol = A ˆ’ B + ¼ 1 ˆ’ ¼ 2 in Equation (1) above, A is a first energy (A) of a first evaluation lattice including silicon atoms, a carbon atom, and metal atoms in a silicon crystal lattice including metals and carbons, B is a second energy (B) of a second evaluation lattice including silicon atoms and metal atoms in a silicon crystal lattice including metals, µ 1 is a constant of -5.422 as a chemical potential obtained by dividing a total energy of silicon in a diamond crystal structure into the number of silicon atoms present in a unit lattice, and µ 2 is a constant of - 9.097 as a chemical potential obtained by dividing a total energy of carbon in the diamond crystal structure into the number of carbon atoms present in the unit lattice.