TRANSISTORS CONFIGURED FOR GATE OVERBIASING AND CIRCUITS THEREFROM
An electronic circuit and methods of operating the electronic circuit are provided. The electronic circuit includes a pull-up transistor for pulling up an input/output (I/O) node of the output circuit to a first voltage and a first isolation transistor for coupling the pull-up transistor to the I/O...
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creator | ISAKANIAN, Patrick YU, Bo THILENIUS, Stephen Clifford JALILIZEINALI, Reza LOKE, Alvin Leng Sun |
description | An electronic circuit and methods of operating the electronic circuit are provided. The electronic circuit includes a pull-up transistor for pulling up an input/output (I/O) node of the output circuit to a first voltage and a first isolation transistor for coupling the pull-up transistor to the I/O node. The electronic circuit also includes a pull-down transistor for pulling down the I/O node to a second voltage and a second isolation transistor for coupling the pull-down transistor to the I/O node. In the electronic circuit, the pull-up and the pull-down transistors are transistors supporting a first drain-to-source voltage and a first gate-to-source voltage, while the first and the second isolation transistors are transistors supporting the first drain-to-source voltage and a second gate-to-source voltage greater than the first gate-to-source voltage. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3269039B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3269039B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3269039B13</originalsourceid><addsrcrecordid>eNrjZHAKCXL0C_YMDvEPClZw9vdz83QPDXJ1UXDzD1JwdwxxVfAPcw1y8nQM9vRzV3D0c1Fw9gxyDvUMCVYI8XANcnUL8vflYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxrgHGRmaWBsaWTobGRCgBANk4Kys</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>TRANSISTORS CONFIGURED FOR GATE OVERBIASING AND CIRCUITS THEREFROM</title><source>esp@cenet</source><creator>ISAKANIAN, Patrick ; YU, Bo ; THILENIUS, Stephen Clifford ; JALILIZEINALI, Reza ; LOKE, Alvin Leng Sun</creator><creatorcontrib>ISAKANIAN, Patrick ; YU, Bo ; THILENIUS, Stephen Clifford ; JALILIZEINALI, Reza ; LOKE, Alvin Leng Sun</creatorcontrib><description>An electronic circuit and methods of operating the electronic circuit are provided. The electronic circuit includes a pull-up transistor for pulling up an input/output (I/O) node of the output circuit to a first voltage and a first isolation transistor for coupling the pull-up transistor to the I/O node. The electronic circuit also includes a pull-down transistor for pulling down the I/O node to a second voltage and a second isolation transistor for coupling the pull-down transistor to the I/O node. In the electronic circuit, the pull-up and the pull-down transistors are transistors supporting a first drain-to-source voltage and a first gate-to-source voltage, while the first and the second isolation transistors are transistors supporting the first drain-to-source voltage and a second gate-to-source voltage greater than the first gate-to-source voltage.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRONIC CIRCUITRY ; ELECTRICITY ; PULSE TECHNIQUE</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230510&DB=EPODOC&CC=EP&NR=3269039B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230510&DB=EPODOC&CC=EP&NR=3269039B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ISAKANIAN, Patrick</creatorcontrib><creatorcontrib>YU, Bo</creatorcontrib><creatorcontrib>THILENIUS, Stephen Clifford</creatorcontrib><creatorcontrib>JALILIZEINALI, Reza</creatorcontrib><creatorcontrib>LOKE, Alvin Leng Sun</creatorcontrib><title>TRANSISTORS CONFIGURED FOR GATE OVERBIASING AND CIRCUITS THEREFROM</title><description>An electronic circuit and methods of operating the electronic circuit are provided. The electronic circuit includes a pull-up transistor for pulling up an input/output (I/O) node of the output circuit to a first voltage and a first isolation transistor for coupling the pull-up transistor to the I/O node. The electronic circuit also includes a pull-down transistor for pulling down the I/O node to a second voltage and a second isolation transistor for coupling the pull-down transistor to the I/O node. In the electronic circuit, the pull-up and the pull-down transistors are transistors supporting a first drain-to-source voltage and a first gate-to-source voltage, while the first and the second isolation transistors are transistors supporting the first drain-to-source voltage and a second gate-to-source voltage greater than the first gate-to-source voltage.</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRICITY</subject><subject>PULSE TECHNIQUE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAKCXL0C_YMDvEPClZw9vdz83QPDXJ1UXDzD1JwdwxxVfAPcw1y8nQM9vRzV3D0c1Fw9gxyDvUMCVYI8XANcnUL8vflYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxrgHGRmaWBsaWTobGRCgBANk4Kys</recordid><startdate>20230510</startdate><enddate>20230510</enddate><creator>ISAKANIAN, Patrick</creator><creator>YU, Bo</creator><creator>THILENIUS, Stephen Clifford</creator><creator>JALILIZEINALI, Reza</creator><creator>LOKE, Alvin Leng Sun</creator><scope>EVB</scope></search><sort><creationdate>20230510</creationdate><title>TRANSISTORS CONFIGURED FOR GATE OVERBIASING AND CIRCUITS THEREFROM</title><author>ISAKANIAN, Patrick ; YU, Bo ; THILENIUS, Stephen Clifford ; JALILIZEINALI, Reza ; LOKE, Alvin Leng Sun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3269039B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2023</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRICITY</topic><topic>PULSE TECHNIQUE</topic><toplevel>online_resources</toplevel><creatorcontrib>ISAKANIAN, Patrick</creatorcontrib><creatorcontrib>YU, Bo</creatorcontrib><creatorcontrib>THILENIUS, Stephen Clifford</creatorcontrib><creatorcontrib>JALILIZEINALI, Reza</creatorcontrib><creatorcontrib>LOKE, Alvin Leng Sun</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ISAKANIAN, Patrick</au><au>YU, Bo</au><au>THILENIUS, Stephen Clifford</au><au>JALILIZEINALI, Reza</au><au>LOKE, Alvin Leng Sun</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TRANSISTORS CONFIGURED FOR GATE OVERBIASING AND CIRCUITS THEREFROM</title><date>2023-05-10</date><risdate>2023</risdate><abstract>An electronic circuit and methods of operating the electronic circuit are provided. The electronic circuit includes a pull-up transistor for pulling up an input/output (I/O) node of the output circuit to a first voltage and a first isolation transistor for coupling the pull-up transistor to the I/O node. The electronic circuit also includes a pull-down transistor for pulling down the I/O node to a second voltage and a second isolation transistor for coupling the pull-down transistor to the I/O node. In the electronic circuit, the pull-up and the pull-down transistors are transistors supporting a first drain-to-source voltage and a first gate-to-source voltage, while the first and the second isolation transistors are transistors supporting the first drain-to-source voltage and a second gate-to-source voltage greater than the first gate-to-source voltage.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRONIC CIRCUITRY ELECTRICITY PULSE TECHNIQUE |
title | TRANSISTORS CONFIGURED FOR GATE OVERBIASING AND CIRCUITS THEREFROM |
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