POLISHING COMPOSITION CONTAINING CERIA PARTICLES AND METHOD OF USE

The invention provides a chemical-mechanical polishing composition including wet-process ceria particles having a median particle size of about 25 nm to about 150 nm and a particle size distribution of about 300 nm or more, and an aqueous carrier. The invention also provides a method of polishing a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LAM, Viet, REISS, Brian, JIA, Renhe
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator LAM, Viet
REISS, Brian
JIA, Renhe
description The invention provides a chemical-mechanical polishing composition including wet-process ceria particles having a median particle size of about 25 nm to about 150 nm and a particle size distribution of about 300 nm or more, and an aqueous carrier. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon layer, with the polishing composition.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3265526B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3265526B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3265526B13</originalsourceid><addsrcrecordid>eNrjZHAK8PfxDPbw9HNXcPb3DfAP9gzx9PcDsv1CHD39wMKuQZ6OCgGOQSGezj6uwQqOfi4Kvq4hHv4uCv5uCqHBrjwMrGmJOcWpvFCam0HBzTXE2UM3tSA_PrW4IDE5NS-1JN41wNjIzNTUyMzJ0JgIJQC9firZ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>POLISHING COMPOSITION CONTAINING CERIA PARTICLES AND METHOD OF USE</title><source>esp@cenet</source><creator>LAM, Viet ; REISS, Brian ; JIA, Renhe</creator><creatorcontrib>LAM, Viet ; REISS, Brian ; JIA, Renhe</creatorcontrib><description>The invention provides a chemical-mechanical polishing composition including wet-process ceria particles having a median particle size of about 25 nm to about 150 nm and a particle size distribution of about 300 nm or more, and an aqueous carrier. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon layer, with the polishing composition.</description><language>eng ; fre ; ger</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; INORGANIC CHEMISTRY ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; PERFORMING OPERATIONS ; POLISHES ; POLISHING ; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH ; SEMICONDUCTOR DEVICES ; SKI WAXES ; TRANSPORTING</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210414&amp;DB=EPODOC&amp;CC=EP&amp;NR=3265526B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210414&amp;DB=EPODOC&amp;CC=EP&amp;NR=3265526B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LAM, Viet</creatorcontrib><creatorcontrib>REISS, Brian</creatorcontrib><creatorcontrib>JIA, Renhe</creatorcontrib><title>POLISHING COMPOSITION CONTAINING CERIA PARTICLES AND METHOD OF USE</title><description>The invention provides a chemical-mechanical polishing composition including wet-process ceria particles having a median particle size of about 25 nm to about 150 nm and a particle size distribution of about 300 nm or more, and an aqueous carrier. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon layer, with the polishing composition.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>INORGANIC CHEMISTRY</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHES</subject><subject>POLISHING</subject><subject>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SKI WAXES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAK8PfxDPbw9HNXcPb3DfAP9gzx9PcDsv1CHD39wMKuQZ6OCgGOQSGezj6uwQqOfi4Kvq4hHv4uCv5uCqHBrjwMrGmJOcWpvFCam0HBzTXE2UM3tSA_PrW4IDE5NS-1JN41wNjIzNTUyMzJ0JgIJQC9firZ</recordid><startdate>20210414</startdate><enddate>20210414</enddate><creator>LAM, Viet</creator><creator>REISS, Brian</creator><creator>JIA, Renhe</creator><scope>EVB</scope></search><sort><creationdate>20210414</creationdate><title>POLISHING COMPOSITION CONTAINING CERIA PARTICLES AND METHOD OF USE</title><author>LAM, Viet ; REISS, Brian ; JIA, Renhe</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3265526B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2021</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>INORGANIC CHEMISTRY</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHES</topic><topic>POLISHING</topic><topic>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SKI WAXES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>LAM, Viet</creatorcontrib><creatorcontrib>REISS, Brian</creatorcontrib><creatorcontrib>JIA, Renhe</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LAM, Viet</au><au>REISS, Brian</au><au>JIA, Renhe</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>POLISHING COMPOSITION CONTAINING CERIA PARTICLES AND METHOD OF USE</title><date>2021-04-14</date><risdate>2021</risdate><abstract>The invention provides a chemical-mechanical polishing composition including wet-process ceria particles having a median particle size of about 25 nm to about 150 nm and a particle size distribution of about 300 nm or more, and an aqueous carrier. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon layer, with the polishing composition.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre ; ger
recordid cdi_epo_espacenet_EP3265526B1
source esp@cenet
subjects ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS
DRESSING OR CONDITIONING OF ABRADING SURFACES
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
INORGANIC CHEMISTRY
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
PERFORMING OPERATIONS
POLISHES
POLISHING
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SEMICONDUCTOR DEVICES
SKI WAXES
TRANSPORTING
title POLISHING COMPOSITION CONTAINING CERIA PARTICLES AND METHOD OF USE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T21%3A41%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LAM,%20Viet&rft.date=2021-04-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP3265526B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true